TY - JOUR
T1 - Structural and Optical Properties of Tungsten Disulfide Nanoscale Films Grown by Sulfurization from W and WO3
AU - Gultom, Pangihutan
AU - Chiang, Jiang Yan
AU - Huang, Tzu Tai
AU - Lee, Jung Chuan
AU - Su, Shu Hsuan
AU - Huang, Jung Chung Andrew
N1 - Publisher Copyright:
© 2023 by the authors.
PY - 2023/4
Y1 - 2023/4
N2 - Tungsten disulfide (WS2) was prepared from W metal and WO3 by ion beam sputtering and sulfurization in a different number of layers, including monolayer, bilayer, six-layer, and nine-layer. To obtain better crystallinity, the nine-layer of WS2 was also prepared from W metal and sulfurized in a furnace at different temperatures (800, 850, 900, and 950 °C). X-ray diffraction revealed that WS2 has a 2-H crystal structure and the crystallinity improved with increasing sulfurization temperature, while the crystallinity of WS2 sulfurized from WO3 (WS2-WO3) is better than that sulfurized from W-metal (WS2-W). Raman spectra show that the full-width at half maximum (FWHM) of WS2-WO3 is narrower than that of WS2-W. We demonstrate that high-quality monocrystalline WS2 thin films can be prepared at wafer scale by sulfurization of WO3. The photoluminescence of the WS2 monolayer is strongly enhanced and centered at 1.98 eV. The transmittance of the WS2 monolayer exceeds 80%, and the measured band gap is 1.9 eV, as shown by ultraviolet-visible-infrared spectroscopy.
AB - Tungsten disulfide (WS2) was prepared from W metal and WO3 by ion beam sputtering and sulfurization in a different number of layers, including monolayer, bilayer, six-layer, and nine-layer. To obtain better crystallinity, the nine-layer of WS2 was also prepared from W metal and sulfurized in a furnace at different temperatures (800, 850, 900, and 950 °C). X-ray diffraction revealed that WS2 has a 2-H crystal structure and the crystallinity improved with increasing sulfurization temperature, while the crystallinity of WS2 sulfurized from WO3 (WS2-WO3) is better than that sulfurized from W-metal (WS2-W). Raman spectra show that the full-width at half maximum (FWHM) of WS2-WO3 is narrower than that of WS2-W. We demonstrate that high-quality monocrystalline WS2 thin films can be prepared at wafer scale by sulfurization of WO3. The photoluminescence of the WS2 monolayer is strongly enhanced and centered at 1.98 eV. The transmittance of the WS2 monolayer exceeds 80%, and the measured band gap is 1.9 eV, as shown by ultraviolet-visible-infrared spectroscopy.
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U2 - 10.3390/nano13071276
DO - 10.3390/nano13071276
M3 - Article
AN - SCOPUS:85152954235
SN - 2079-4991
VL - 13
JO - Nanomaterials
JF - Nanomaterials
IS - 7
M1 - 1276
ER -