Structural and optoelectronic characteristics of well-aligned ZnO nanorod arrays for photodiodes

Liang Wen Ji, Te Hua Fang, Cheng Zhi Wu, Tung Te Chu, Huilin Jiang, Shoou-Jinn Chang, Shi Ming Peng, Jingchang Zhong, Wen Yang Chang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Structural and optoelectronic characteristics of the well-aligned ZnO nanorod arrays were achieved by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, photoluminescence (PL) and micro-Raman spectroscopy. The results indicated that the well-aligned ZnO nanorod with wurtzite structure was preferred oriented in the [002] c-axis direction. ZnO nanorod-based Schottky-barrier photodiodes has been also fabricated and characterized. With an incident wavelength of 370 nm and 5 V applied bias, it was found that maximum photoresponsivity of the photodiode was 0.051 A/W, which corresponded to a quantum efficiency of 21%.

Original languageEnglish
Pages (from-to)295-299
Number of pages5
JournalJournal of Nanoelectronics and Optoelectronics
Issue number3
Publication statusPublished - 2010 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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