Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

P. T. Hsieh; Y. C. Chen; C. M. Wang; Y. Z. Tsai; C. C. Hu

doi:10.1007/s00339-006-3620-2

Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

P. T. Hsieh, Y. C. Chen, C. M. Wang, Y. Z. Tsai, C. C. Hu

Center for Micro/Nano Science and Technology

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

ZnO thin films deposited on SiO₂/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900°C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500°C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500°C and reached a maximum intensity at 900°C. The possible mechanisms for visible-light emission are discussed.

Original language	English
Pages (from-to)	345-349
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	84
Issue number	3
DOIs	https://doi.org/10.1007/s00339-006-3620-2
Publication status	Published - 2006 Aug

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science

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abstract = "ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900°C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500°C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500°C and reached a maximum intensity at 900°C. The possible mechanisms for visible-light emission are discussed.",

author = "Hsieh, {P. T.} and Chen, {Y. C.} and Wang, {C. M.} and Tsai, {Y. Z.} and Hu, {C. C.}",

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T1 - Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

AU - Hsieh, P. T.

AU - Chen, Y. C.

AU - Wang, C. M.

AU - Tsai, Y. Z.

AU - Hu, C. C.

PY - 2006/8

Y1 - 2006/8

N2 - ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900°C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500°C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500°C and reached a maximum intensity at 900°C. The possible mechanisms for visible-light emission are discussed.

AB - ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900°C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500°C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500°C and reached a maximum intensity at 900°C. The possible mechanisms for visible-light emission are discussed.

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Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

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