Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

P. T. Hsieh; Y. C. Chen; C. M. Wang; Y. Z. Tsai; C. C. Hu

doi:10.1007/s00339-006-3620-2

Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

P. T. Hsieh, Y. C. Chen, C. M. Wang, Y. Z. Tsai, C. C. Hu

Education and Research Group

Research output: Contribution to journal › Article

41 Citations (Scopus)

Abstract

ZnO thin films deposited on SiO₂/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900°C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500°C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500°C and reached a maximum intensity at 900°C. The possible mechanisms for visible-light emission are discussed.

Original language	English
Pages (from-to)	345-349
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	84
Issue number	3
DOIs	https://doi.org/10.1007/s00339-006-3620-2
Publication status	Published - 2006 Aug 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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Hsieh, P. T., Chen, Y. C., Wang, C. M., Tsai, Y. Z., & Hu, C. C. (2006). Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process. Applied Physics A: Materials Science and Processing, 84(3), 345-349. https://doi.org/10.1007/s00339-006-3620-2

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