Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

P. T. Hsieh, Y. C. Chen, C. M. Wang, Y. Z. Tsai, C. C. Hu

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900°C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500°C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500°C and reached a maximum intensity at 900°C. The possible mechanisms for visible-light emission are discussed.

Original languageEnglish
Pages (from-to)345-349
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume84
Issue number3
DOIs
Publication statusPublished - 2006 Aug 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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