Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

Jin Zou; Yong Wang; Faxian Xiu; Zuoming Zhao; Kang L. Wang

doi:10.1109/COMMAD.2012.6472336

Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

Jin Zou, Yong Wang, Faxian Xiu, Zuoming Zhao, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	13-14
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472336
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 2012 Dec 12 → 2012 Dec 14

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12-12-12 → 12-12-14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/COMMAD.2012.6472336

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Zou, J., Wang, Y., Xiu, F., Zhao, Z., & Wang, K. L. (2012). Structural characteristics of GeMn diluted magnetic semiconductor nanostructures. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 13-14). [6472336] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472336

@inproceedings{1df856b5e9bd4a6797fd2cf68d61e692,

title = "Structural characteristics of GeMn diluted magnetic semiconductor nanostructures",

abstract = "In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.",

author = "Jin Zou and Yong Wang and Faxian Xiu and Zuoming Zhao and Wang, {Kang L.}",

year = "2012",

doi = "10.1109/COMMAD.2012.6472336",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "13--14",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Zou, J, Wang, Y, Xiu, F, Zhao, Z & Wang, KL 2012, Structural characteristics of GeMn diluted magnetic semiconductor nanostructures. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472336, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 13-14, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12-12-12. https://doi.org/10.1109/COMMAD.2012.6472336

Structural characteristics of GeMn diluted magnetic semiconductor nanostructures. / Zou, Jin; Wang, Yong; Xiu, Faxian et al.

2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 13-14 6472336 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

AU - Zou, Jin

AU - Wang, Yong

AU - Xiu, Faxian

AU - Zhao, Zuoming

AU - Wang, Kang L.

PY - 2012

Y1 - 2012

N2 - In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.

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U2 - 10.1109/COMMAD.2012.6472336

DO - 10.1109/COMMAD.2012.6472336

M3 - Conference contribution

AN - SCOPUS:84875577120

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 13

EP - 14

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

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Zou J, Wang Y, Xiu F, Zhao Z, Wang KL. Structural characteristics of GeMn diluted magnetic semiconductor nanostructures. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 13-14. 6472336. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472336

Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

Abstract

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All Science Journal Classification (ASJC) codes

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