Structural characteristics of self-assembled Ge/Si quantum dot superlattices

B. Yan, Z. Yang, Y. Shi, J. L. Liu, R. Zhang, Y. D. Zheng, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the interface structural parameters, mainly roughness and the interdiffusion properties have been investigated in two series of Ge/Si quantum dot superlattices (QDSLs), grown by solid-source molecular beam epitaxy (MBE) on Si (100) substrate with S-K mode at 540°C. When the nominal thickness of Ge layer increased from 1.2 to 1.8nm, the Ge layers get rough and the thickness of Ge layers decreases. With the periods of Ge/Si QDSLs increase, the thicknesses of Ge wetting layers (WLs) tend to be thinner and the roughness of Ge dots' height becomes larger. The composition of the quantum dots (QDs) is also estimated by the integrated peak intensity ratio IGe-Ge/I Si-Gefrom Roman spectra. The calculated result of Ge/Si interdiffusion from Roman spectra is in accordance with the analyses results of X-ray Reflection (XRR) experiments.

Original languageEnglish
Title of host publication2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Pages139-142
Number of pages4
DOIs
Publication statusPublished - 2005
Event2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China
Duration: 2004 Sep 202004 Sep 25

Publication series

NameIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Volume2005

Conference

Conference2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
CountryChina
CityBeijing
Period04-09-2004-09-25

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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