TY - JOUR
T1 - Structural effect on UV emission properties of high-quality ZnO thin films deposited by RF magnetron sputtering
AU - Hsieh, P. T.
AU - Chen, Y. C.
AU - Kao, K. S.
AU - Wang, C. M.
N1 - Funding Information:
This study was partly supported by the National Science Council, Taiwan, under Contract no. NSC 94-2216-E-110-021. The measurement of PL characteristics was carried out at National Science Council Core Facilities Laboratory for Nano-Science and Nano-Technology, Kaohsiung–Pingtung area.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/4/15
Y1 - 2007/4/15
N2 - Zinc oxide (ZnO) thin films were deposited on SiO2/Si(1 0 0) substrates by reactive RF magnetron sputtering technology. The effects of sputtering parameters on the crystalline and luminescent characteristics of ZnO films were investigated. According to the results, the optimal sputtering parameters for the best photoluminescence (PL) characteristics were found to be oxygen concentration, (O2/O2+Ar), of 21%, RF power of 100 W, substrate temperature of 500 °C and sputtering pressure of 5 mTorr. The obtained wavelength of light emission was found at 379 nm (ultraviolet-UV region), which may be due to the band-to-band transition. However, the optimal parameters for the best PL characteristics of ZnO thin films were not consistent with those obtained from the (0 0 2) intensities of XRD analyses. As a result, XRD pattern was not considered as the key issue concerning the intensity of PL of ZnO thin film. The intensity of the emitted UV light will correspond to the grain size of ZnO film.
AB - Zinc oxide (ZnO) thin films were deposited on SiO2/Si(1 0 0) substrates by reactive RF magnetron sputtering technology. The effects of sputtering parameters on the crystalline and luminescent characteristics of ZnO films were investigated. According to the results, the optimal sputtering parameters for the best photoluminescence (PL) characteristics were found to be oxygen concentration, (O2/O2+Ar), of 21%, RF power of 100 W, substrate temperature of 500 °C and sputtering pressure of 5 mTorr. The obtained wavelength of light emission was found at 379 nm (ultraviolet-UV region), which may be due to the band-to-band transition. However, the optimal parameters for the best PL characteristics of ZnO thin films were not consistent with those obtained from the (0 0 2) intensities of XRD analyses. As a result, XRD pattern was not considered as the key issue concerning the intensity of PL of ZnO thin film. The intensity of the emitted UV light will correspond to the grain size of ZnO film.
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U2 - 10.1016/j.physb.2006.11.043
DO - 10.1016/j.physb.2006.11.043
M3 - Article
AN - SCOPUS:33847272092
VL - 392
SP - 332
EP - 336
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-2
ER -