Abstract
Aluminum nitride (AlN) nanostructures were prepared using thermal chemical vapour deposition process. At growth temperatures of 950 °C, AlN nanotips with apex diameters of 10 nm, base diameters of ∼100 nm, and length of ∼2000 nm were obtained. Whereas when the growth temperature was 1200 °C, we obtained shorter and thicker AlN nanorods. Compelling microscopic evidences were obtained to show that stacked AlN platelets of diminishing size formed the building blocks for the nanotips. A reducing Ehrlich-Schwoebel barrier introduced into a diffusion mediated growth model explains the formation of AlN nanorods at increasing growth temperatures.
Original language | English |
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Pages (from-to) | 152-157 |
Number of pages | 6 |
Journal | Chemical Physics Letters |
Volume | 418 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2006 Jan 25 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy
- Physical and Theoretical Chemistry