Structural evolution of implanted vicinal Si(111) during annealing via analysis of the dipole contribution

Chun Chu Liu; Chung Wei Liu; Jin Yuan Cheng; Yi Jen Huang; Kuang Yao Lo

doi:10.1063/1.3662929

Structural evolution of implanted vicinal Si(111) during annealing via analysis of the dipole contribution

Chun Chu Liu, Chung Wei Liu, Jin Yuan Cheng, Yi Jen Huang, Kuang Yao Lo

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The changes in the amplitude and orientation of the dipole at the surface layer of phosphorous (P) implanted vicinal Si(111) show the evolution of its restructuring. The different electronegativities between Si and participated P atoms changed the dipolar configuration of Si surface. The dipolar configuration of implanted vicinal Si(111) would be variant for the different annealing conditions at which silicon recrystallization and P activation occur. Reflective second harmonic generation (RSHG) is a sensitive technique for studying the symmetrical dipole structure on the surface. We offer a model to distinguish dipolar configurations of the top surface from the one of the implanted bulk Si(111) and explain their relative phase variation in the results of RSHG experiment.

Original language	English
Article number	103520
Journal	Journal of Applied Physics
Volume	110
Issue number	10
DOIs	https://doi.org/10.1063/1.3662929
Publication status	Published - 2011 Nov 15

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.3662929

Cite this

@article{1bb564baac6d4f0995502ccd1aedbfc4,

title = "Structural evolution of implanted vicinal Si(111) during annealing via analysis of the dipole contribution",

abstract = "The changes in the amplitude and orientation of the dipole at the surface layer of phosphorous (P) implanted vicinal Si(111) show the evolution of its restructuring. The different electronegativities between Si and participated P atoms changed the dipolar configuration of Si surface. The dipolar configuration of implanted vicinal Si(111) would be variant for the different annealing conditions at which silicon recrystallization and P activation occur. Reflective second harmonic generation (RSHG) is a sensitive technique for studying the symmetrical dipole structure on the surface. We offer a model to distinguish dipolar configurations of the top surface from the one of the implanted bulk Si(111) and explain their relative phase variation in the results of RSHG experiment.",

author = "Liu, {Chun Chu} and Liu, {Chung Wei} and Cheng, {Jin Yuan} and Huang, {Yi Jen} and Lo, {Kuang Yao}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract No. NSC 99-2112-M-415-004-MY3. The authors would like to thank the Advanced Optoelectronic Technology Center, National Cheng Kung University, Taiwan, for support through equipment and cooperation. ",

year = "2011",

month = nov,

day = "15",

doi = "10.1063/1.3662929",

language = "English",

volume = "110",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Structural evolution of implanted vicinal Si(111) during annealing via analysis of the dipole contribution

AU - Liu, Chun Chu

AU - Liu, Chung Wei

AU - Cheng, Jin Yuan

AU - Huang, Yi Jen

AU - Lo, Kuang Yao

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract No. NSC 99-2112-M-415-004-MY3. The authors would like to thank the Advanced Optoelectronic Technology Center, National Cheng Kung University, Taiwan, for support through equipment and cooperation.

PY - 2011/11/15

Y1 - 2011/11/15

N2 - The changes in the amplitude and orientation of the dipole at the surface layer of phosphorous (P) implanted vicinal Si(111) show the evolution of its restructuring. The different electronegativities between Si and participated P atoms changed the dipolar configuration of Si surface. The dipolar configuration of implanted vicinal Si(111) would be variant for the different annealing conditions at which silicon recrystallization and P activation occur. Reflective second harmonic generation (RSHG) is a sensitive technique for studying the symmetrical dipole structure on the surface. We offer a model to distinguish dipolar configurations of the top surface from the one of the implanted bulk Si(111) and explain their relative phase variation in the results of RSHG experiment.

AB - The changes in the amplitude and orientation of the dipole at the surface layer of phosphorous (P) implanted vicinal Si(111) show the evolution of its restructuring. The different electronegativities between Si and participated P atoms changed the dipolar configuration of Si surface. The dipolar configuration of implanted vicinal Si(111) would be variant for the different annealing conditions at which silicon recrystallization and P activation occur. Reflective second harmonic generation (RSHG) is a sensitive technique for studying the symmetrical dipole structure on the surface. We offer a model to distinguish dipolar configurations of the top surface from the one of the implanted bulk Si(111) and explain their relative phase variation in the results of RSHG experiment.

UR - http://www.scopus.com/inward/record.url?scp=82555202652&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82555202652&partnerID=8YFLogxK

U2 - 10.1063/1.3662929

DO - 10.1063/1.3662929

M3 - Article

AN - SCOPUS:82555202652

SN - 0021-8979

VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 103520

ER -

Structural evolution of implanted vicinal Si(111) during annealing via analysis of the dipole contribution

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this