Structural evolution of implanted vicinal Si(111) during annealing via analysis of the dipole contribution

Chun Chu Liu, Chung Wei Liu, Jin Yuan Cheng, Yi Jen Huang, Kuang Yao Lo

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The changes in the amplitude and orientation of the dipole at the surface layer of phosphorous (P) implanted vicinal Si(111) show the evolution of its restructuring. The different electronegativities between Si and participated P atoms changed the dipolar configuration of Si surface. The dipolar configuration of implanted vicinal Si(111) would be variant for the different annealing conditions at which silicon recrystallization and P activation occur. Reflective second harmonic generation (RSHG) is a sensitive technique for studying the symmetrical dipole structure on the surface. We offer a model to distinguish dipolar configurations of the top surface from the one of the implanted bulk Si(111) and explain their relative phase variation in the results of RSHG experiment.

Original languageEnglish
Article number103520
JournalJournal of Applied Physics
Volume110
Issue number10
DOIs
Publication statusPublished - 2011 Nov 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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