Structural influence on the electronic properties of methoxy substituted polyaniline/aluminum Schottky barrier diodes

Li Ming Huang, Ten-Chin Wen, A. Gopalan, Fan Ren

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Poly(o-methoxyaniline) (POMA) and poly(2,5-dimethoxyaniline) (PDMA) were used for fabricating Schottky diode devices with sandwich structure, as Al/POMA/indium tin oxide (ITO) coated glass and ITO/PDMA/Al. These devices exhibit rectifying behavior with differences in performance parameters like turn on voltage of the device, barrier height and saturation current density. A close comparison of the current (I)-voltage (V) characteristics reveals such differences. Cyclicvoltammetry and UV-Vis spectroscopy of POMA and PDMA films were used to obtain electrochemical and optical properties of the polymers and discussed in support of the observed differences in the electronic properties of the devices fabricated with POMA/PDMA.

Original languageEnglish
Pages (from-to)88-95
Number of pages8
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume104
Issue number1-2
DOIs
Publication statusPublished - 2003 Nov 15

Fingerprint

Schottky barrier diodes
Polyaniline
Schottky diodes
Tin oxides
Aluminum
Electronic properties
Indium
aluminum
Sandwich structures
Electric potential
Ultraviolet spectroscopy
Electrochemical properties
electronics
indium oxides
tin oxides
Diodes
Current density
Optical properties
Glass
sandwich structures

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "Poly(o-methoxyaniline) (POMA) and poly(2,5-dimethoxyaniline) (PDMA) were used for fabricating Schottky diode devices with sandwich structure, as Al/POMA/indium tin oxide (ITO) coated glass and ITO/PDMA/Al. These devices exhibit rectifying behavior with differences in performance parameters like turn on voltage of the device, barrier height and saturation current density. A close comparison of the current (I)-voltage (V) characteristics reveals such differences. Cyclicvoltammetry and UV-Vis spectroscopy of POMA and PDMA films were used to obtain electrochemical and optical properties of the polymers and discussed in support of the observed differences in the electronic properties of the devices fabricated with POMA/PDMA.",
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AU - Huang, Li Ming

AU - Wen, Ten-Chin

AU - Gopalan, A.

AU - Ren, Fan

PY - 2003/11/15

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AB - Poly(o-methoxyaniline) (POMA) and poly(2,5-dimethoxyaniline) (PDMA) were used for fabricating Schottky diode devices with sandwich structure, as Al/POMA/indium tin oxide (ITO) coated glass and ITO/PDMA/Al. These devices exhibit rectifying behavior with differences in performance parameters like turn on voltage of the device, barrier height and saturation current density. A close comparison of the current (I)-voltage (V) characteristics reveals such differences. Cyclicvoltammetry and UV-Vis spectroscopy of POMA and PDMA films were used to obtain electrochemical and optical properties of the polymers and discussed in support of the observed differences in the electronic properties of the devices fabricated with POMA/PDMA.

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