Structural influence on the electronic properties of methoxy substituted polyaniline/aluminum Schottky barrier diodes

Li Ming Huang, Ten Chin Wen, A. Gopalan, Fan Ren

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Poly(o-methoxyaniline) (POMA) and poly(2,5-dimethoxyaniline) (PDMA) were used for fabricating Schottky diode devices with sandwich structure, as Al/POMA/indium tin oxide (ITO) coated glass and ITO/PDMA/Al. These devices exhibit rectifying behavior with differences in performance parameters like turn on voltage of the device, barrier height and saturation current density. A close comparison of the current (I)-voltage (V) characteristics reveals such differences. Cyclicvoltammetry and UV-Vis spectroscopy of POMA and PDMA films were used to obtain electrochemical and optical properties of the polymers and discussed in support of the observed differences in the electronic properties of the devices fabricated with POMA/PDMA.

Original languageEnglish
Pages (from-to)88-95
Number of pages8
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume104
Issue number1-2
DOIs
Publication statusPublished - 2003 Nov 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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