Structure and electrical properties of MgTiO3 thin films deposited by rf magnetron sputtering

Cheng Liang Huang; Chung Long Pan

doi:10.1116/1.1810164

Structure and electrical properties of MgTiO₃ thin films deposited by rf magnetron sputtering

Cheng Liang Huang, Chung Long Pan

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The fabrication of MaTiO₃ thin films on n-type Si(100) substrates by rf magnetron sputtering by using synthesized MgTiO₃ target was discussed. It was observed that it was possible to obtain highly oriented MgTiO₃(110) thin film at a rf power density of 7.7 W/cm ² and a substrate temperature of 400°C, which was much lower than the bulk sintering temperature. The determination of the microstructure and surface morphology of the MgTiO₃ films deposited in Si(100) by X-ray diffraction (XRD), scanning electron microscopy and atomic force microscopy, was also presented. It was found that the grain size of the film increased with an increase in the rf power density and substrate temperature.

Original language	English
Pages (from-to)	2440-2445
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	6
DOIs	https://doi.org/10.1116/1.1810164
Publication status	Published - 2004 Nov

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1810164

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title = "Structure and electrical properties of MgTiO3 thin films deposited by rf magnetron sputtering",

abstract = "The fabrication of MaTiO3 thin films on n-type Si(100) substrates by rf magnetron sputtering by using synthesized MgTiO3 target was discussed. It was observed that it was possible to obtain highly oriented MgTiO3(110) thin film at a rf power density of 7.7 W/cm 2 and a substrate temperature of 400°C, which was much lower than the bulk sintering temperature. The determination of the microstructure and surface morphology of the MgTiO3 films deposited in Si(100) by X-ray diffraction (XRD), scanning electron microscopy and atomic force microscopy, was also presented. It was found that the grain size of the film increased with an increase in the rf power density and substrate temperature.",

author = "Huang, {Cheng Liang} and Pan, {Chung Long}",

note = "Funding Information: This material is based on work supported by the National Science Council of the Republic of China under Grant No. NSC-93-2213-E-006-038.",

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T1 - Structure and electrical properties of MgTiO3 thin films deposited by rf magnetron sputtering

AU - Huang, Cheng Liang

AU - Pan, Chung Long

N1 - Funding Information: This material is based on work supported by the National Science Council of the Republic of China under Grant No. NSC-93-2213-E-006-038.

PY - 2004/11

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N2 - The fabrication of MaTiO3 thin films on n-type Si(100) substrates by rf magnetron sputtering by using synthesized MgTiO3 target was discussed. It was observed that it was possible to obtain highly oriented MgTiO3(110) thin film at a rf power density of 7.7 W/cm 2 and a substrate temperature of 400°C, which was much lower than the bulk sintering temperature. The determination of the microstructure and surface morphology of the MgTiO3 films deposited in Si(100) by X-ray diffraction (XRD), scanning electron microscopy and atomic force microscopy, was also presented. It was found that the grain size of the film increased with an increase in the rf power density and substrate temperature.

AB - The fabrication of MaTiO3 thin films on n-type Si(100) substrates by rf magnetron sputtering by using synthesized MgTiO3 target was discussed. It was observed that it was possible to obtain highly oriented MgTiO3(110) thin film at a rf power density of 7.7 W/cm 2 and a substrate temperature of 400°C, which was much lower than the bulk sintering temperature. The determination of the microstructure and surface morphology of the MgTiO3 films deposited in Si(100) by X-ray diffraction (XRD), scanning electron microscopy and atomic force microscopy, was also presented. It was found that the grain size of the film increased with an increase in the rf power density and substrate temperature.

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Structure and electrical properties of MgTiO₃ thin films deposited by rf magnetron sputtering

Abstract

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