Structure and electrical properties of MgTiO3 thin films deposited by rf magnetron sputtering

Cheng Liang Huang, Chung Long Pan

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The fabrication of MaTiO3 thin films on n-type Si(100) substrates by rf magnetron sputtering by using synthesized MgTiO3 target was discussed. It was observed that it was possible to obtain highly oriented MgTiO3(110) thin film at a rf power density of 7.7 W/cm 2 and a substrate temperature of 400°C, which was much lower than the bulk sintering temperature. The determination of the microstructure and surface morphology of the MgTiO3 films deposited in Si(100) by X-ray diffraction (XRD), scanning electron microscopy and atomic force microscopy, was also presented. It was found that the grain size of the film increased with an increase in the rf power density and substrate temperature.

Original languageEnglish
Pages (from-to)2440-2445
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number6
DOIs
Publication statusPublished - 2004 Nov 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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