Structure of GaAsN alloy within miscibility gap

Hong Ming Wu, Kuang I. Lin, Hao Hsiung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the structural and electronic properties of a series of GaAs1-xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electron diffraction (SAD) were used to probe the crystalline of GaAs0.496N0.504 sample. The results indicate that the alloy is polycrystalline and amorphous. In the polycrystalline observed zinc-blende (ZB) and hexagonal structure. In this result, we suggest generation of miscibility and phase separation from two kind of structure. Calculation the vertical and horizontal lattice constant with x in the range from 0.106-0.848. Observed the az is dramatic drop with increase N content and axy slow decrease, we suggest this result relation of nitrogen cluster alone [001] and residual horizontal substrate strain. Photo-modulated reflectance spectroscopy was used to determine the energy gap of the GaAs1-xNx alloys, which ranges from 0.7-2.0 eV, covering a large part of the solar spectrum. The energy gap is in agreement with BAC model.

Original languageEnglish
Title of host publication2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509024391
DOIs
Publication statusPublished - 2016 Aug 12
Event5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan
Duration: 2016 May 42016 May 6

Publication series

Name2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

Other

Other5th International Symposium on Next-Generation Electronics, ISNE 2016
CountryTaiwan
CityHsinchu
Period16-05-0416-05-06

Fingerprint

Solubility
Energy gap
Substrates
Molecular beam epitaxy
Electron diffraction
Phase separation
Electronic properties
Lattice constants
Zinc
Structural properties
Nitrogen
Spectroscopy
Crystalline materials
Transmission electron microscopy
Plasmas
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wu, H. M., Lin, K. I., & Lin, H. H. (2016). Structure of GaAsN alloy within miscibility gap. In 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 [7543310] (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2016.7543310
Wu, Hong Ming ; Lin, Kuang I. ; Lin, Hao Hsiung. / Structure of GaAsN alloy within miscibility gap. 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016).
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Wu, HM, Lin, KI & Lin, HH 2016, Structure of GaAsN alloy within miscibility gap. in 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016., 7543310, 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016, Institute of Electrical and Electronics Engineers Inc., 5th International Symposium on Next-Generation Electronics, ISNE 2016, Hsinchu, Taiwan, 16-05-04. https://doi.org/10.1109/ISNE.2016.7543310

Structure of GaAsN alloy within miscibility gap. / Wu, Hong Ming; Lin, Kuang I.; Lin, Hao Hsiung.

2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7543310 (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - We report on the structural and electronic properties of a series of GaAs1-xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electron diffraction (SAD) were used to probe the crystalline of GaAs0.496N0.504 sample. The results indicate that the alloy is polycrystalline and amorphous. In the polycrystalline observed zinc-blende (ZB) and hexagonal structure. In this result, we suggest generation of miscibility and phase separation from two kind of structure. Calculation the vertical and horizontal lattice constant with x in the range from 0.106-0.848. Observed the az is dramatic drop with increase N content and axy slow decrease, we suggest this result relation of nitrogen cluster alone [001] and residual horizontal substrate strain. Photo-modulated reflectance spectroscopy was used to determine the energy gap of the GaAs1-xNx alloys, which ranges from 0.7-2.0 eV, covering a large part of the solar spectrum. The energy gap is in agreement with BAC model.

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Wu HM, Lin KI, Lin HH. Structure of GaAsN alloy within miscibility gap. In 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7543310. (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016). https://doi.org/10.1109/ISNE.2016.7543310