Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, C. W. Tu

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra are measured for a f series of In 0.54Ga 0.46P 1-yN y/GaAs heterostructures grown on GaAs (100) substrate. Redshifts of the PR and PL peaks indicate that the band gap of In 0.54Ga 0.46P 1-yN y is dramatically reduced as nitrogen is incorporated. The emergence of additional peaks in PR spectra as nitrogen is incorporated indicates that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between In 0.54Ga 0.46P 1-yN y, and GaAs. The band gap energy and transition energies between the confined levels in the 2DEG are determined for samples with various nitrogen concentrations v. The number of confined levels in the 2DEG is found to increase with y; the composition-dependent bowing parameter is determined.

Original languageEnglish
Article number061103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number6
DOIs
Publication statusPublished - 2005 Feb 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures'. Together they form a unique fingerprint.

Cite this