Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures

J. S. Hwang; K. I. Lin; H. C. Lin; S. H. Hsu; K. C. Chen; Y. T. Lu; Y. G. Hong; C. W. Tu

doi:10.1063/1.1855406

Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, C. W. Tu

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35 Citations (Scopus)

Abstract

Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra are measured for a f series of In _0.54Ga _0.46P _1-yN _y/GaAs heterostructures grown on GaAs (100) substrate. Redshifts of the PR and PL peaks indicate that the band gap of In _0.54Ga _0.46P _1-yN _y is dramatically reduced as nitrogen is incorporated. The emergence of additional peaks in PR spectra as nitrogen is incorporated indicates that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between In _0.54Ga _0.46P _1-yN _y, and GaAs. The band gap energy and transition energies between the confined levels in the 2DEG are determined for samples with various nitrogen concentrations v. The number of confined levels in the 2DEG is found to increase with y; the composition-dependent bowing parameter is determined.

Original language	English
Article number	061103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	6
DOIs	https://doi.org/10.1063/1.1855406
Publication status	Published - 2005 Feb 7

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{415e5e17a2d64e40b614f6b2171f8809,

title = "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures",

abstract = "Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra are measured for a f series of In 0.54Ga 0.46P 1-yN y/GaAs heterostructures grown on GaAs (100) substrate. Redshifts of the PR and PL peaks indicate that the band gap of In 0.54Ga 0.46P 1-yN y is dramatically reduced as nitrogen is incorporated. The emergence of additional peaks in PR spectra as nitrogen is incorporated indicates that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between In 0.54Ga 0.46P 1-yN y, and GaAs. The band gap energy and transition energies between the confined levels in the 2DEG are determined for samples with various nitrogen concentrations v. The number of confined levels in the 2DEG is found to increase with y; the composition-dependent bowing parameter is determined.",

author = "Hwang, {J. S.} and Lin, {K. I.} and Lin, {H. C.} and Hsu, {S. H.} and Chen, {K. C.} and Lu, {Y. T.} and Hong, {Y. G.} and Tu, {C. W.}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under Contract No. NSC 91-2112-M-006-016.",

year = "2005",

month = feb,

day = "7",

doi = "10.1063/1.1855406",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

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T1 - Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures

AU - Hwang, J. S.

AU - Lin, K. I.

AU - Lin, H. C.

AU - Hsu, S. H.

AU - Chen, K. C.

AU - Lu, Y. T.

AU - Hong, Y. G.

AU - Tu, C. W.

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under Contract No. NSC 91-2112-M-006-016.

PY - 2005/2/7

Y1 - 2005/2/7

N2 - Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra are measured for a f series of In 0.54Ga 0.46P 1-yN y/GaAs heterostructures grown on GaAs (100) substrate. Redshifts of the PR and PL peaks indicate that the band gap of In 0.54Ga 0.46P 1-yN y is dramatically reduced as nitrogen is incorporated. The emergence of additional peaks in PR spectra as nitrogen is incorporated indicates that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between In 0.54Ga 0.46P 1-yN y, and GaAs. The band gap energy and transition energies between the confined levels in the 2DEG are determined for samples with various nitrogen concentrations v. The number of confined levels in the 2DEG is found to increase with y; the composition-dependent bowing parameter is determined.

AB - Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra are measured for a f series of In 0.54Ga 0.46P 1-yN y/GaAs heterostructures grown on GaAs (100) substrate. Redshifts of the PR and PL peaks indicate that the band gap of In 0.54Ga 0.46P 1-yN y is dramatically reduced as nitrogen is incorporated. The emergence of additional peaks in PR spectra as nitrogen is incorporated indicates that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between In 0.54Ga 0.46P 1-yN y, and GaAs. The band gap energy and transition energies between the confined levels in the 2DEG are determined for samples with various nitrogen concentrations v. The number of confined levels in the 2DEG is found to increase with y; the composition-dependent bowing parameter is determined.

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Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures

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