Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence

K. I. Lin; K. C. Chen; T. S. Wang; Y. T. Lu; J. S. Hwang

doi:10.1016/j.physe.2005.12.038

Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence

K. I. Lin, K. C. Chen, T. S. Wang, Y. T. Lu, J. S. Hwang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Photoreflectance (PR) and photoluminescence (PL) spectra are measured for a series of In_0.54Ga_0.46P_1-yN_y/GaAs heterostructures at temperatures ranging from 25 to 300 K. The redshifts of the PR and PL peaks indicate that the band gap of InGaPN is dramatically reduced as nitrogen is incorporated. The transition energies of the band edge at various temperatures are measured and least-squares fitted to the Varshni equation. With N incorporation, the PL peak energy exhibits a particular behavior with temperature, which is not observed in PR spectra. This is attributed to carrier localization at low temperatures resulting from N clusters in the samples. In addition, the emergence of additional peaks in PR spectra as N is incorporated implies that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between InGaPN and GaAs. The number of confined levels in the 2DEG is found to increase with N concentrations.

Original language	English
Pages (from-to)	211-214
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	32
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physe.2005.12.038
Publication status	Published - 2006 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2005.12.038

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@article{81156bf9e9cf4b7cafb1a3f2f3d39886,

title = "Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence",

abstract = "Photoreflectance (PR) and photoluminescence (PL) spectra are measured for a series of In0.54Ga0.46P1-yNy/GaAs heterostructures at temperatures ranging from 25 to 300 K. The redshifts of the PR and PL peaks indicate that the band gap of InGaPN is dramatically reduced as nitrogen is incorporated. The transition energies of the band edge at various temperatures are measured and least-squares fitted to the Varshni equation. With N incorporation, the PL peak energy exhibits a particular behavior with temperature, which is not observed in PR spectra. This is attributed to carrier localization at low temperatures resulting from N clusters in the samples. In addition, the emergence of additional peaks in PR spectra as N is incorporated implies that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between InGaPN and GaAs. The number of confined levels in the 2DEG is found to increase with N concentrations.",

author = "Lin, {K. I.} and Chen, {K. C.} and Wang, {T. S.} and Lu, {Y. T.} and Hwang, {J. S.}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under contract no. NSC 93-2112-M-006-015 and no. NSC 93-2112-M-006-018.",

year = "2006",

month = may,

doi = "10.1016/j.physe.2005.12.038",

language = "English",

volume = "32",

pages = "211--214",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence

AU - Lin, K. I.

AU - Chen, K. C.

AU - Wang, T. S.

AU - Lu, Y. T.

AU - Hwang, J. S.

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under contract no. NSC 93-2112-M-006-015 and no. NSC 93-2112-M-006-018.

PY - 2006/5

Y1 - 2006/5

N2 - Photoreflectance (PR) and photoluminescence (PL) spectra are measured for a series of In0.54Ga0.46P1-yNy/GaAs heterostructures at temperatures ranging from 25 to 300 K. The redshifts of the PR and PL peaks indicate that the band gap of InGaPN is dramatically reduced as nitrogen is incorporated. The transition energies of the band edge at various temperatures are measured and least-squares fitted to the Varshni equation. With N incorporation, the PL peak energy exhibits a particular behavior with temperature, which is not observed in PR spectra. This is attributed to carrier localization at low temperatures resulting from N clusters in the samples. In addition, the emergence of additional peaks in PR spectra as N is incorporated implies that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between InGaPN and GaAs. The number of confined levels in the 2DEG is found to increase with N concentrations.

AB - Photoreflectance (PR) and photoluminescence (PL) spectra are measured for a series of In0.54Ga0.46P1-yNy/GaAs heterostructures at temperatures ranging from 25 to 300 K. The redshifts of the PR and PL peaks indicate that the band gap of InGaPN is dramatically reduced as nitrogen is incorporated. The transition energies of the band edge at various temperatures are measured and least-squares fitted to the Varshni equation. With N incorporation, the PL peak energy exhibits a particular behavior with temperature, which is not observed in PR spectra. This is attributed to carrier localization at low temperatures resulting from N clusters in the samples. In addition, the emergence of additional peaks in PR spectra as N is incorporated implies that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between InGaPN and GaAs. The number of confined levels in the 2DEG is found to increase with N concentrations.

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EP - 214

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2 SPEC. ISS.

ER -

Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence

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