Abstract
The structural and optical properties of green-light-emitting diodes grown by metalorganic chemical vapor deposition technique, were studied using high-resolution transmission electron microscopy, double crystal high resolution x-ray diffraction and low temperature photoluminescence. To study the microstructure of the layers, the back surface of the samples was mechanically polished and then thinned by an Ar + ion milling. A He-Cd laser was used for excitation, and a GaAs based photodetector was used to record excited emission.
Original language | English |
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Pages (from-to) | 401-403 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2004 Jul 19 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)