Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

K. S. Ramaiah; Y. K. Su; S. J. Chang; C. H. Chen; F. S. Juang; H. P. Liu; I. G. Chen

doi:10.1063/1.1773371

Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

K. S. Ramaiah, Y. K. Su, S. J. Chang, C. H. Chen, F. S. Juang, H. P. Liu, I. G. Chen

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

The structural and optical properties of green-light-emitting diodes grown by metalorganic chemical vapor deposition technique, were studied using high-resolution transmission electron microscopy, double crystal high resolution x-ray diffraction and low temperature photoluminescence. To study the microstructure of the layers, the back surface of the samples was mechanically polished and then thinned by an Ar ⁺ ion milling. A He-Cd laser was used for excitation, and a GaAs based photodetector was used to record excited emission.

Original language	English
Pages (from-to)	401-403
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	3
DOIs	https://doi.org/10.1063/1.1773371
Publication status	Published - 2004 Jul 19

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1773371

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title = "Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition",

abstract = "The structural and optical properties of green-light-emitting diodes grown by metalorganic chemical vapor deposition technique, were studied using high-resolution transmission electron microscopy, double crystal high resolution x-ray diffraction and low temperature photoluminescence. To study the microstructure of the layers, the back surface of the samples was mechanically polished and then thinned by an Ar + ion milling. A He-Cd laser was used for excitation, and a GaAs based photodetector was used to record excited emission.",

author = "Ramaiah, {K. S.} and Su, {Y. K.} and Chang, {S. J.} and Chen, {C. H.} and Juang, {F. S.} and Liu, {H. P.} and Chen, {I. G.}",

note = "Funding Information: The authors would like to thank the National Science Council (NSC), Taipei for partial financial support under Contract No. NSC 85-2215-E-006-004. The authors thank Professor H. Morko{\c c} and Professor D. Johnstone for fruitful discussions.",

year = "2004",

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doi = "10.1063/1.1773371",

language = "English",

volume = "85",

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journal = "Applied Physics Letters",

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T1 - Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

AU - Ramaiah, K. S.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Chen, C. H.

AU - Juang, F. S.

AU - Liu, H. P.

AU - Chen, I. G.

N1 - Funding Information: The authors would like to thank the National Science Council (NSC), Taipei for partial financial support under Contract No. NSC 85-2215-E-006-004. The authors thank Professor H. Morkoç and Professor D. Johnstone for fruitful discussions.

PY - 2004/7/19

Y1 - 2004/7/19

N2 - The structural and optical properties of green-light-emitting diodes grown by metalorganic chemical vapor deposition technique, were studied using high-resolution transmission electron microscopy, double crystal high resolution x-ray diffraction and low temperature photoluminescence. To study the microstructure of the layers, the back surface of the samples was mechanically polished and then thinned by an Ar + ion milling. A He-Cd laser was used for excitation, and a GaAs based photodetector was used to record excited emission.

AB - The structural and optical properties of green-light-emitting diodes grown by metalorganic chemical vapor deposition technique, were studied using high-resolution transmission electron microscopy, double crystal high resolution x-ray diffraction and low temperature photoluminescence. To study the microstructure of the layers, the back surface of the samples was mechanically polished and then thinned by an Ar + ion milling. A He-Cd laser was used for excitation, and a GaAs based photodetector was used to record excited emission.

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Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

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