Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

K. S. Ramaiah, Y. K. Su, S. J. Chang, C. H. Chen, F. S. Juang, H. P. Liu, I. G. Chen

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

The structural and optical properties of green-light-emitting diodes grown by metalorganic chemical vapor deposition technique, were studied using high-resolution transmission electron microscopy, double crystal high resolution x-ray diffraction and low temperature photoluminescence. To study the microstructure of the layers, the back surface of the samples was mechanically polished and then thinned by an Ar + ion milling. A He-Cd laser was used for excitation, and a GaAs based photodetector was used to record excited emission.

Original languageEnglish
Pages (from-to)401-403
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number3
DOIs
Publication statusPublished - 2004 Jul 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this