Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

K. S. Ramaiah; Y. K. Su; S. J. Chang; C. H. Chen; F. S. Juang; H. P. Liu; I. G. Chen

doi:10.1063/1.1773371

Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

K. S. Ramaiah
, Y. K. Su
, S. J. Chang
, C. H. Chen
, F. S. Juang
, H. P. Liu
, I. G. Chen

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

The structural and optical properties of green-light-emitting diodes grown by metalorganic chemical vapor deposition technique, were studied using high-resolution transmission electron microscopy, double crystal high resolution x-ray diffraction and low temperature photoluminescence. To study the microstructure of the layers, the back surface of the samples was mechanically polished and then thinned by an Ar ⁺ ion milling. A He-Cd laser was used for excitation, and a GaAs based photodetector was used to record excited emission.

Original language	English
Pages (from-to)	401-403
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	3
DOIs	https://doi.org/10.1063/1.1773371
Publication status	Published - 2004 Jul 19

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1773371

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title = "Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition",

abstract = "The structural and optical properties of green-light-emitting diodes grown by metalorganic chemical vapor deposition technique, were studied using high-resolution transmission electron microscopy, double crystal high resolution x-ray diffraction and low temperature photoluminescence. To study the microstructure of the layers, the back surface of the samples was mechanically polished and then thinned by an Ar + ion milling. A He-Cd laser was used for excitation, and a GaAs based photodetector was used to record excited emission.",

author = "Ramaiah, \{K. S.\} and Su, \{Y. K.\} and Chang, \{S. J.\} and Chen, \{C. H.\} and Juang, \{F. S.\} and Liu, \{H. P.\} and Chen, \{I. G.\}",

note = "Funding Information: The authors would like to thank the National Science Council (NSC), Taipei for partial financial support under Contract No. NSC 85-2215-E-006-004. The authors thank Professor H. Morko{\c c} and Professor D. Johnstone for fruitful discussions.",

year = "2004",

month = jul,

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doi = "10.1063/1.1773371",

language = "English",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

AU - Ramaiah, K. S.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Chen, C. H.

AU - Juang, F. S.

AU - Liu, H. P.

AU - Chen, I. G.

N1 - Funding Information: The authors would like to thank the National Science Council (NSC), Taipei for partial financial support under Contract No. NSC 85-2215-E-006-004. The authors thank Professor H. Morkoç and Professor D. Johnstone for fruitful discussions.

PY - 2004/7/19

Y1 - 2004/7/19

N2 - The structural and optical properties of green-light-emitting diodes grown by metalorganic chemical vapor deposition technique, were studied using high-resolution transmission electron microscopy, double crystal high resolution x-ray diffraction and low temperature photoluminescence. To study the microstructure of the layers, the back surface of the samples was mechanically polished and then thinned by an Ar + ion milling. A He-Cd laser was used for excitation, and a GaAs based photodetector was used to record excited emission.

AB - The structural and optical properties of green-light-emitting diodes grown by metalorganic chemical vapor deposition technique, were studied using high-resolution transmission electron microscopy, double crystal high resolution x-ray diffraction and low temperature photoluminescence. To study the microstructure of the layers, the back surface of the samples was mechanically polished and then thinned by an Ar + ion milling. A He-Cd laser was used for excitation, and a GaAs based photodetector was used to record excited emission.

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JF - Applied Physics Letters

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ER -

Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

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