TY - JOUR
T1 - Studies of interband transitions and thermal annealing effects on ion-implented (100) GaSb by photoreflectance and Raman spectra
AU - Hwang, J. S.
AU - Tyan, S. L.
AU - Lin, M. J.
AU - Su, Y. K.
N1 - Funding Information:
Acknowledgement -This project was supported by the National Science Council of the Republic of China under contract NSC 80-0208-M006-28.
PY - 1991/12
Y1 - 1991/12
N2 - The technique of photoreflectance was employed to investigate the interband transitions (E0, E0 + Δ0, E1 and E1 + Δ1) of GaSb as well as their temperature dependence over the range of 83 to 300 K. The parameters which describe the temperature dependence in terms of the Varshni expression were also evaluated. Through examination of the spectral lineshapes, it was concluded that band to band transition is the main mechanism of E0 + Δ0 transition, while excitonic transition is responsible for E1 and E1 + Δ1 transitions. Both Raman and photo- reflectance spectra were also used to study the damage resulting from ion implantation, as well as the induced "healing" caused by a range of differing thermal annealing temperatures and/or time. Both techniques provide a convenient, powerful and contactless tool in investigating the above-mentioned studies.
AB - The technique of photoreflectance was employed to investigate the interband transitions (E0, E0 + Δ0, E1 and E1 + Δ1) of GaSb as well as their temperature dependence over the range of 83 to 300 K. The parameters which describe the temperature dependence in terms of the Varshni expression were also evaluated. Through examination of the spectral lineshapes, it was concluded that band to band transition is the main mechanism of E0 + Δ0 transition, while excitonic transition is responsible for E1 and E1 + Δ1 transitions. Both Raman and photo- reflectance spectra were also used to study the damage resulting from ion implantation, as well as the induced "healing" caused by a range of differing thermal annealing temperatures and/or time. Both techniques provide a convenient, powerful and contactless tool in investigating the above-mentioned studies.
UR - http://www.scopus.com/inward/record.url?scp=0005029063&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0005029063&partnerID=8YFLogxK
U2 - 10.1016/0038-1098(91)90527-3
DO - 10.1016/0038-1098(91)90527-3
M3 - Article
AN - SCOPUS:0005029063
SN - 0038-1098
VL - 80
SP - 891
EP - 896
JO - Solid State Communications
JF - Solid State Communications
IS - 10
ER -