Studies of interband transitions and thermal annealing effects on ion-implented (100) GaSb by photoreflectance and Raman spectra

J. S. Hwang, S. L. Tyan, M. J. Lin, Y. K. Su

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13 Citations (Scopus)

Abstract

The technique of photoreflectance was employed to investigate the interband transitions (E0, E0 + Δ0, E1 and E1 + Δ1) of GaSb as well as their temperature dependence over the range of 83 to 300 K. The parameters which describe the temperature dependence in terms of the Varshni expression were also evaluated. Through examination of the spectral lineshapes, it was concluded that band to band transition is the main mechanism of E0 + Δ0 transition, while excitonic transition is responsible for E1 and E1 + Δ1 transitions. Both Raman and photo- reflectance spectra were also used to study the damage resulting from ion implantation, as well as the induced "healing" caused by a range of differing thermal annealing temperatures and/or time. Both techniques provide a convenient, powerful and contactless tool in investigating the above-mentioned studies.

Original languageEnglish
Pages (from-to)891-896
Number of pages6
JournalSolid State Communications
Volume80
Issue number10
DOIs
Publication statusPublished - 1991 Dec

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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