TY - JOUR
T1 - Studies of Interfacial Microstructures and Series Resistance on Electroplated and Hot-Dipped Sn-xCu Photovoltaic Modules
AU - Chen, Kuan Jen
AU - Hung, Fei Yi
AU - Lui, Truan Sheng
AU - Hsu, Lin
N1 - Funding Information:
The authors acknowledge Dr. Kuan-Jen Chen for assistance in technical services (SIMS) by Ministry of Science and Technology (MOST) Instrument Center of National Cheng Kung University (NCKU) and MOST, Taiwan for financially supporting this study under Grant No. MOST 105-2628-E-006-001-MY2.
Publisher Copyright:
© 2018, The Minerals, Metals & Materials Society.
PY - 2018/10/1
Y1 - 2018/10/1
N2 - The present study applied molten Sn-xCu (x = 0.3, 0.7, 2.5, and 5.0 wt.%) alloy solders to a photovoltaic (PV) ribbon. A hot-dipped Sn-0.7Cu PV ribbon reflowed on a Si solar cell had the lowest series resistance of the tested module (Cu/Solder/Ag). After biasing for 72 h, the rapid growth of intermetallic compounds (IMCs) (Cu6Sn5, Ag3Sn) caused the series resistance of the module to increase by 52%. To improve the performance of the PV module, an electroplated PV ribbon was used in place of the hot-dipped one. The required solder thickness for the electroplated ribbon was one third that for hot-dipped ribbon. Applying less solder to a PV ribbon avoids the overgrowth of IMCs and thus enhances module conductivity.
AB - The present study applied molten Sn-xCu (x = 0.3, 0.7, 2.5, and 5.0 wt.%) alloy solders to a photovoltaic (PV) ribbon. A hot-dipped Sn-0.7Cu PV ribbon reflowed on a Si solar cell had the lowest series resistance of the tested module (Cu/Solder/Ag). After biasing for 72 h, the rapid growth of intermetallic compounds (IMCs) (Cu6Sn5, Ag3Sn) caused the series resistance of the module to increase by 52%. To improve the performance of the PV module, an electroplated PV ribbon was used in place of the hot-dipped one. The required solder thickness for the electroplated ribbon was one third that for hot-dipped ribbon. Applying less solder to a PV ribbon avoids the overgrowth of IMCs and thus enhances module conductivity.
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U2 - 10.1007/s11664-018-6483-3
DO - 10.1007/s11664-018-6483-3
M3 - Article
AN - SCOPUS:85049686648
SN - 0361-5235
VL - 47
SP - 6028
EP - 6035
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 10
ER -