Studies of surface state densities of semiconductors by room-temperature photoreflectance

J. S. Hwang, Shih-hui Chang

Research output: Contribution to journalConference articlepeer-review

Abstract

In this study, we develop a novel approach to determine the surface Fermi level and the surface state densities of semiconductors. The built-in electric field and thus the surface barrier height are evaluated from the Franz-Keldysh oscillations in the PR spectra. Based on the thermionic-emission theory and current-transport theory, the surface state density as well as the pinning position of the surface Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.

Original languageEnglish
Pages (from-to)213-218
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume573
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' - San Francisco, CA, USA
Duration: 1999 Apr 51999 Apr 7

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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