Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

J. S. Hwang, H. G. Lin, K. I. Lin, T. S. Wang, Y. T. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

THz radiation from series of GaAs and InAlAs surface intrinsic-N + (SIN+) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN+ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference 2005
Pages1338-1339
Number of pages2
DOIs
Publication statusPublished - 2005 Dec 1

Publication series

NameIQEC, International Quantum Electronics Conference Proceedings
Volume2005

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electric fields
radiation
valleys
estimating

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Hwang, J. S., Lin, H. G., Lin, K. I., Wang, T. S., & Lu, Y. T. (2005). Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors. In International Quantum Electronics Conference 2005 (pp. 1338-1339). [1561093] (IQEC, International Quantum Electronics Conference Proceedings; Vol. 2005). https://doi.org/10.1109/IQEC.2005.1561093
Hwang, J. S. ; Lin, H. G. ; Lin, K. I. ; Wang, T. S. ; Lu, Y. T. / Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors. International Quantum Electronics Conference 2005. 2005. pp. 1338-1339 (IQEC, International Quantum Electronics Conference Proceedings).
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abstract = "THz radiation from series of GaAs and InAlAs surface intrinsic-N + (SIN+) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN+ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.",
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Hwang, JS, Lin, HG, Lin, KI, Wang, TS & Lu, YT 2005, Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors. in International Quantum Electronics Conference 2005., 1561093, IQEC, International Quantum Electronics Conference Proceedings, vol. 2005, pp. 1338-1339. https://doi.org/10.1109/IQEC.2005.1561093

Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors. / Hwang, J. S.; Lin, H. G.; Lin, K. I.; Wang, T. S.; Lu, Y. T.

International Quantum Electronics Conference 2005. 2005. p. 1338-1339 1561093 (IQEC, International Quantum Electronics Conference Proceedings; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Hwang JS, Lin HG, Lin KI, Wang TS, Lu YT. Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors. In International Quantum Electronics Conference 2005. 2005. p. 1338-1339. 1561093. (IQEC, International Quantum Electronics Conference Proceedings). https://doi.org/10.1109/IQEC.2005.1561093