Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

J. S. Hwang, H. G. Lin, K. I. Lin, T. S. Wang, Y. T. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

THz radiation from series of GaAs and InAlAs surface intrinsic-N + (SIN+) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN+ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference 2005
Pages1338-1339
Number of pages2
DOIs
Publication statusPublished - 2005 Dec 1

Publication series

NameIQEC, International Quantum Electronics Conference Proceedings
Volume2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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