Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

J. S. Hwang; H. G. Lin; K. I. Lin; T. S. Wang; Y. T. Lu

doi:10.1109/IQEC.2005.1561093

Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N⁺ structures and the critical electric fields of semiconductors

J. S. Hwang
, H. G. Lin
, K. I. Lin
, T. S. Wang
, Y. T. Lu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

THz radiation from series of GaAs and InAlAs surface intrinsic-N ⁺ (SIN⁺) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN⁺ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.

Original language	English
Title of host publication	International Quantum Electronics Conference 2005
Pages	1338-1339
Number of pages	2
DOIs	https://doi.org/10.1109/IQEC.2005.1561093
Publication status	Published - 2005

Publication series

Name	IQEC, International Quantum Electronics Conference Proceedings
Volume	2005

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1109/IQEC.2005.1561093

Cite this

Hwang, J. S., Lin, H. G., Lin, K. I., Wang, T. S., & Lu, Y. T. (2005). Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N⁺ structures and the critical electric fields of semiconductors. In International Quantum Electronics Conference 2005 (pp. 1338-1339). Article 1561093 (IQEC, International Quantum Electronics Conference Proceedings; Vol. 2005). https://doi.org/10.1109/IQEC.2005.1561093

@inproceedings{9c9b548ef29344ff9945de7d4c6ee88a,

title = "Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors",

abstract = "THz radiation from series of GaAs and InAlAs surface intrinsic-N + (SIN+) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN+ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.",

author = "Hwang, \{J. S.\} and Lin, \{H. G.\} and Lin, \{K. I.\} and Wang, \{T. S.\} and Lu, \{Y. T.\}",

year = "2005",

doi = "10.1109/IQEC.2005.1561093",

language = "English",

isbn = "078039240X",

series = "IQEC, International Quantum Electronics Conference Proceedings",

pages = "1338--1339",

booktitle = "International Quantum Electronics Conference 2005",

}

Hwang, JS, Lin, HG, Lin, KI, Wang, TS & Lu, YT 2005, Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N⁺ structures and the critical electric fields of semiconductors. in International Quantum Electronics Conference 2005., 1561093, IQEC, International Quantum Electronics Conference Proceedings, vol. 2005, pp. 1338-1339. https://doi.org/10.1109/IQEC.2005.1561093

Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N⁺ structures and the critical electric fields of semiconductors. / Hwang, J. S.; Lin, H. G.; Lin, K. I. et al.
International Quantum Electronics Conference 2005. 2005. p. 1338-1339 1561093 (IQEC, International Quantum Electronics Conference Proceedings; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

AU - Hwang, J. S.

AU - Lin, H. G.

AU - Lin, K. I.

AU - Wang, T. S.

AU - Lu, Y. T.

PY - 2005

Y1 - 2005

N2 - THz radiation from series of GaAs and InAlAs surface intrinsic-N + (SIN+) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN+ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.

AB - THz radiation from series of GaAs and InAlAs surface intrinsic-N + (SIN+) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN+ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.

UR - https://www.scopus.com/pages/publications/33846479250

UR - https://www.scopus.com/pages/publications/33846479250#tab=citedBy

U2 - 10.1109/IQEC.2005.1561093

DO - 10.1109/IQEC.2005.1561093

M3 - Conference contribution

AN - SCOPUS:33846479250

SN - 078039240X

SN - 9780780392403

T3 - IQEC, International Quantum Electronics Conference Proceedings

SP - 1338

EP - 1339

BT - International Quantum Electronics Conference 2005

ER -