Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation

J. S. Hwang, H. C. Lin, C. K. Chang, T. S. Wang, K. I. Lin, L. S. Chang, Yan-Ten Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-n+ (SIN+) structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called "critical electric field" related with the energy difference between the Γ to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the intensity of surface field exceeds the critical field, the THz amplitude is independent of the surface field but proportional the number of the photo-excited carriers. Our study proposed two optimal conditions for an SIN+ structure to serve as a THz emitter: the width of its intrinsic layer is nearly equal to the penetration depth of the pump beam, and the intensity of built-in electric field is nearly equal to the critical electric field. Notably, the critical field determined from the THz amplitude under various electric fields provides one way to estimate the Γ to L valley splitting in semiconductors.

Original languageEnglish
Title of host publicationTerahertz and Gigahertz Electronics and Photonics VI
DOIs
Publication statusPublished - 2007 May 23
EventTerahertz and Gigahertz Electronics and Photonics VI - San Jose, CA, United States
Duration: 2007 Jan 212007 Jan 22

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6472
ISSN (Print)0277-786X

Other

OtherTerahertz and Gigahertz Electronics and Photonics VI
CountryUnited States
CitySan Jose, CA
Period07-01-2107-01-22

Fingerprint

valleys
Semiconductors
Electric Field
Radiation
Electric fields
Semiconductor materials
electric fields
radiation
Directly proportional
Gallium Arsenide
Penetration
Pump
Exceed
emitters
penetration
Pumps
pumps
Series
estimates
products

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Hwang, J. S., Lin, H. C., Chang, C. K., Wang, T. S., Lin, K. I., Chang, L. S., & Lu, Y-T. (2007). Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation. In Terahertz and Gigahertz Electronics and Photonics VI [647203] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6472). https://doi.org/10.1117/12.700142
Hwang, J. S. ; Lin, H. C. ; Chang, C. K. ; Wang, T. S. ; Lin, K. I. ; Chang, L. S. ; Lu, Yan-Ten. / Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation. Terahertz and Gigahertz Electronics and Photonics VI. 2007. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{cfbe8ae96160445eb6b48f99ae5f5f91,
title = "Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation",
abstract = "The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-n+ (SIN+) structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called {"}critical electric field{"} related with the energy difference between the Γ to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the intensity of surface field exceeds the critical field, the THz amplitude is independent of the surface field but proportional the number of the photo-excited carriers. Our study proposed two optimal conditions for an SIN+ structure to serve as a THz emitter: the width of its intrinsic layer is nearly equal to the penetration depth of the pump beam, and the intensity of built-in electric field is nearly equal to the critical electric field. Notably, the critical field determined from the THz amplitude under various electric fields provides one way to estimate the Γ to L valley splitting in semiconductors.",
author = "Hwang, {J. S.} and Lin, {H. C.} and Chang, {C. K.} and Wang, {T. S.} and Lin, {K. I.} and Chang, {L. S.} and Yan-Ten Lu",
year = "2007",
month = "5",
day = "23",
doi = "10.1117/12.700142",
language = "English",
isbn = "0819465852",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Terahertz and Gigahertz Electronics and Photonics VI",

}

Hwang, JS, Lin, HC, Chang, CK, Wang, TS, Lin, KI, Chang, LS & Lu, Y-T 2007, Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation. in Terahertz and Gigahertz Electronics and Photonics VI., 647203, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6472, Terahertz and Gigahertz Electronics and Photonics VI, San Jose, CA, United States, 07-01-21. https://doi.org/10.1117/12.700142

Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation. / Hwang, J. S.; Lin, H. C.; Chang, C. K.; Wang, T. S.; Lin, K. I.; Chang, L. S.; Lu, Yan-Ten.

Terahertz and Gigahertz Electronics and Photonics VI. 2007. 647203 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6472).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation

AU - Hwang, J. S.

AU - Lin, H. C.

AU - Chang, C. K.

AU - Wang, T. S.

AU - Lin, K. I.

AU - Chang, L. S.

AU - Lu, Yan-Ten

PY - 2007/5/23

Y1 - 2007/5/23

N2 - The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-n+ (SIN+) structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called "critical electric field" related with the energy difference between the Γ to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the intensity of surface field exceeds the critical field, the THz amplitude is independent of the surface field but proportional the number of the photo-excited carriers. Our study proposed two optimal conditions for an SIN+ structure to serve as a THz emitter: the width of its intrinsic layer is nearly equal to the penetration depth of the pump beam, and the intensity of built-in electric field is nearly equal to the critical electric field. Notably, the critical field determined from the THz amplitude under various electric fields provides one way to estimate the Γ to L valley splitting in semiconductors.

AB - The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-n+ (SIN+) structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called "critical electric field" related with the energy difference between the Γ to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the intensity of surface field exceeds the critical field, the THz amplitude is independent of the surface field but proportional the number of the photo-excited carriers. Our study proposed two optimal conditions for an SIN+ structure to serve as a THz emitter: the width of its intrinsic layer is nearly equal to the penetration depth of the pump beam, and the intensity of built-in electric field is nearly equal to the critical electric field. Notably, the critical field determined from the THz amplitude under various electric fields provides one way to estimate the Γ to L valley splitting in semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=34248659721&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248659721&partnerID=8YFLogxK

U2 - 10.1117/12.700142

DO - 10.1117/12.700142

M3 - Conference contribution

AN - SCOPUS:34248659721

SN - 0819465852

SN - 9780819465856

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Terahertz and Gigahertz Electronics and Photonics VI

ER -

Hwang JS, Lin HC, Chang CK, Wang TS, Lin KI, Chang LS et al. Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation. In Terahertz and Gigahertz Electronics and Photonics VI. 2007. 647203. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.700142