@inproceedings{cfbe8ae96160445eb6b48f99ae5f5f91,
title = "Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation",
abstract = "The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-n+ (SIN+) structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called {"}critical electric field{"} related with the energy difference between the Γ to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the intensity of surface field exceeds the critical field, the THz amplitude is independent of the surface field but proportional the number of the photo-excited carriers. Our study proposed two optimal conditions for an SIN+ structure to serve as a THz emitter: the width of its intrinsic layer is nearly equal to the penetration depth of the pump beam, and the intensity of built-in electric field is nearly equal to the critical electric field. Notably, the critical field determined from the THz amplitude under various electric fields provides one way to estimate the Γ to L valley splitting in semiconductors.",
author = "Hwang, {J. S.} and Lin, {H. C.} and Chang, {C. K.} and Wang, {T. S.} and Lin, {K. I.} and Chang, {L. S.} and Lu, {Y. T.}",
year = "2007",
doi = "10.1117/12.700142",
language = "English",
isbn = "0819465852",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Terahertz and Gigahertz Electronics and Photonics VI",
note = "Terahertz and Gigahertz Electronics and Photonics VI ; Conference date: 21-01-2007 Through 22-01-2007",
}