Studies of the interfacial electrical properties of a series of oxide films on GaAs by photoreflectance

T. S. Wang, K. I. Lin, H. C. Lin, M. H. Lee, Yan-Ten Lu, J. S. Hwang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This study uses room temperature photoreflectance (PR) to investigate the interfacial characteristics of a series of oxide films, such as Al2O3, Ga2O3, and Ga2O3(Gd2O3), on GaAs. The interfacial electric field is derived from the Franz-Kyldysh oscillations (FKOs) in PR spectra measured at various pump beam flux intensities. The electric fields measured from the FKOs are proved to be the maximum fields existing at the interfaces of the samples. Applying the one-side abrupt-junction model of charge distribution, the barrier height across the interface and the density of interfacial states are determined from the square of maximum electric field as a function of pump beam intensity. The interfacial state densities of these oxide-GaAs structures range from 1010 to 1011 cm-2. Inside GaAs layer, the charge density is found to be uniformly distributed and is 1×1016 cm-3. The electric field within the GaAs layer decreases linearly from its maximum at the interface, to zero, as the distance from the interface increases.

Original languageEnglish
Pages (from-to)1975-1978
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number6
DOIs
Publication statusPublished - 2008 Apr 1

Fingerprint

Oxide films
oxide films
Electric properties
electrical properties
Electric fields
electric fields
Pumps
pumps
oscillations
Charge distribution
Charge density
Oxides
charge distribution
Fluxes
oxides
gallium arsenide
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Wang, T. S. ; Lin, K. I. ; Lin, H. C. ; Lee, M. H. ; Lu, Yan-Ten ; Hwang, J. S. / Studies of the interfacial electrical properties of a series of oxide films on GaAs by photoreflectance. In: Physica E: Low-Dimensional Systems and Nanostructures. 2008 ; Vol. 40, No. 6. pp. 1975-1978.
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Studies of the interfacial electrical properties of a series of oxide films on GaAs by photoreflectance. / Wang, T. S.; Lin, K. I.; Lin, H. C.; Lee, M. H.; Lu, Yan-Ten; Hwang, J. S.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, No. 6, 01.04.2008, p. 1975-1978.

Research output: Contribution to journalArticle

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AU - Wang, T. S.

AU - Lin, K. I.

AU - Lin, H. C.

AU - Lee, M. H.

AU - Lu, Yan-Ten

AU - Hwang, J. S.

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N2 - This study uses room temperature photoreflectance (PR) to investigate the interfacial characteristics of a series of oxide films, such as Al2O3, Ga2O3, and Ga2O3(Gd2O3), on GaAs. The interfacial electric field is derived from the Franz-Kyldysh oscillations (FKOs) in PR spectra measured at various pump beam flux intensities. The electric fields measured from the FKOs are proved to be the maximum fields existing at the interfaces of the samples. Applying the one-side abrupt-junction model of charge distribution, the barrier height across the interface and the density of interfacial states are determined from the square of maximum electric field as a function of pump beam intensity. The interfacial state densities of these oxide-GaAs structures range from 1010 to 1011 cm-2. Inside GaAs layer, the charge density is found to be uniformly distributed and is 1×1016 cm-3. The electric field within the GaAs layer decreases linearly from its maximum at the interface, to zero, as the distance from the interface increases.

AB - This study uses room temperature photoreflectance (PR) to investigate the interfacial characteristics of a series of oxide films, such as Al2O3, Ga2O3, and Ga2O3(Gd2O3), on GaAs. The interfacial electric field is derived from the Franz-Kyldysh oscillations (FKOs) in PR spectra measured at various pump beam flux intensities. The electric fields measured from the FKOs are proved to be the maximum fields existing at the interfaces of the samples. Applying the one-side abrupt-junction model of charge distribution, the barrier height across the interface and the density of interfacial states are determined from the square of maximum electric field as a function of pump beam intensity. The interfacial state densities of these oxide-GaAs structures range from 1010 to 1011 cm-2. Inside GaAs layer, the charge density is found to be uniformly distributed and is 1×1016 cm-3. The electric field within the GaAs layer decreases linearly from its maximum at the interface, to zero, as the distance from the interface increases.

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