Studies on ultra shallow junction 20nm P-MOS with 250°C microwave annealing for activation of boron dopants in silicon

Wen Hsi Lee, Ming Han Tsai, Wei Hsiang Liao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In order to fabricate ultra-shallow junction (USJ) for 20nm IC node application, a low energy (400eV) ion implantation and a novel microwave annealing technique with two steps for the solid phase epitaxy regrowth and activation of boron dopants in silicon were used in this study. In the first step annealing, a 2.4 kWatt(∼500°C) high power microwave annealing was used to regrowth the amorphous layer with PAI treatment of Ge (20keV @5e14 atoms/cm2) into crystal silicon. The activation energy (2.3 eV) to attain rapid lattice restoration for the solid phase epitaxy regrowth by microwave annealing is lower than that by the conventional RTP. In the second step annealing, since the crystalline silicon has high absorption efficiency to microwave, a 0.6 kWatt(∼250°C) low power microwave annealing is able to activate implanted boron in silicon (400eV @1e15 atoms/cm2), and decrease the resistance to 436 ohm. / sq without diffusion. We have successfully demonstrated that the novel ultra low temperature microwave annealing technique is promising for improvement on P-MOS performance. The on/off current ratio (Ion/off) of the P-MOS is more than 2×106 (VDS = -0.05 V). The low resistance of 436 ohm./sq after activating by 250°C microwave annealing is reflected to the high performance of P-MOS with a lower S.S.(-92.59mV), and a high hole mobility 27.5cm2/V-S.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
EditorsMulpuri V. Rao
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479952120
DOIs
Publication statusPublished - 2014 Oct 29
Event20th International Conference on Ion Implantation Technology, IIT 2014 - Portland, United States
Duration: 2014 Jun 302014 Jul 4

Publication series

NameProceedings of the International Conference on Ion Implantation Technology

Other

Other20th International Conference on Ion Implantation Technology, IIT 2014
CountryUnited States
CityPortland
Period14-06-3014-07-04

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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