Study of a GaN-Based LED with an Al/AZO Composite Transparent Conductive Layer

Chi Hsiang Hsu, Sheng Yi Chen, Wei Cheng Chen, Ching Hong Chang, Chun Yen Chen, Jung Hui Tsai, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A new and simple Al/aluminum-doped zinc oxide (AZO) composite structure is proposed to act as a transparent conductive layer (TCL) for GaN-based LEDs. The Al/AZO composite layers effectively improve the current spreading performance, compared with an AZO TCL. Experimentally, the specific contact resistance of the studied Al/AZO LED is reduced by about 27.6%, compared with an AZO LED. In addition, under an operating current of 20 mA, the forward voltage and light output power (LOP) of the studied Al/AZO LED are decreased by 0.15 V and increased by 19.5%, respectively. Uniform and enhanced intensities are also found in light emission mapping images of the studied Al/AZO LED. Consequently, based on benefits including simple structure and improved electrical and optical properties, the studied Al/AZO TCL is suitable for GaN-based LED applications.

Original languageEnglish
Article number7982960
Pages (from-to)3678-3682
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number9
Publication statusPublished - 2017 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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