Study of a GaN-Based LED with an Al/AZO Composite Transparent Conductive Layer

Chi Hsiang Hsu; Sheng Yi Chen; Wei Cheng Chen; Ching Hong Chang; Chun Yen Chen; Jung Hui Tsai; Wen Chau Liu

doi:10.1109/TED.2017.2724599

Study of a GaN-Based LED with an Al/AZO Composite Transparent Conductive Layer

Chi Hsiang Hsu, Sheng Yi Chen, Wei Cheng Chen, Ching Hong Chang, Chun Yen Chen, Jung Hui Tsai, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A new and simple Al/aluminum-doped zinc oxide (AZO) composite structure is proposed to act as a transparent conductive layer (TCL) for GaN-based LEDs. The Al/AZO composite layers effectively improve the current spreading performance, compared with an AZO TCL. Experimentally, the specific contact resistance of the studied Al/AZO LED is reduced by about 27.6%, compared with an AZO LED. In addition, under an operating current of 20 mA, the forward voltage and light output power (LOP) of the studied Al/AZO LED are decreased by 0.15 V and increased by 19.5%, respectively. Uniform and enhanced intensities are also found in light emission mapping images of the studied Al/AZO LED. Consequently, based on benefits including simple structure and improved electrical and optical properties, the studied Al/AZO TCL is suitable for GaN-based LED applications.

Original language	English
Article number	7982960
Pages (from-to)	3678-3682
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	9
DOIs	https://doi.org/10.1109/TED.2017.2724599
Publication status	Published - 2017 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2017.2724599

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title = "Study of a GaN-Based LED with an Al/AZO Composite Transparent Conductive Layer",

abstract = "A new and simple Al/aluminum-doped zinc oxide (AZO) composite structure is proposed to act as a transparent conductive layer (TCL) for GaN-based LEDs. The Al/AZO composite layers effectively improve the current spreading performance, compared with an AZO TCL. Experimentally, the specific contact resistance of the studied Al/AZO LED is reduced by about 27.6%, compared with an AZO LED. In addition, under an operating current of 20 mA, the forward voltage and light output power (LOP) of the studied Al/AZO LED are decreased by 0.15 V and increased by 19.5%, respectively. Uniform and enhanced intensities are also found in light emission mapping images of the studied Al/AZO LED. Consequently, based on benefits including simple structure and improved electrical and optical properties, the studied Al/AZO TCL is suitable for GaN-based LED applications.",

author = "Hsu, {Chi Hsiang} and Chen, {Sheng Yi} and Chen, {Wei Cheng} and Chang, {Ching Hong} and Chen, {Chun Yen} and Tsai, {Jung Hui} and Liu, {Wen Chau}",

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year = "2017",

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T1 - Study of a GaN-Based LED with an Al/AZO Composite Transparent Conductive Layer

AU - Hsu, Chi Hsiang

AU - Chen, Sheng Yi

AU - Chen, Wei Cheng

AU - Chang, Ching Hong

AU - Chen, Chun Yen

AU - Tsai, Jung Hui

AU - Liu, Wen Chau

PY - 2017/9

Y1 - 2017/9

N2 - A new and simple Al/aluminum-doped zinc oxide (AZO) composite structure is proposed to act as a transparent conductive layer (TCL) for GaN-based LEDs. The Al/AZO composite layers effectively improve the current spreading performance, compared with an AZO TCL. Experimentally, the specific contact resistance of the studied Al/AZO LED is reduced by about 27.6%, compared with an AZO LED. In addition, under an operating current of 20 mA, the forward voltage and light output power (LOP) of the studied Al/AZO LED are decreased by 0.15 V and increased by 19.5%, respectively. Uniform and enhanced intensities are also found in light emission mapping images of the studied Al/AZO LED. Consequently, based on benefits including simple structure and improved electrical and optical properties, the studied Al/AZO TCL is suitable for GaN-based LED applications.

AB - A new and simple Al/aluminum-doped zinc oxide (AZO) composite structure is proposed to act as a transparent conductive layer (TCL) for GaN-based LEDs. The Al/AZO composite layers effectively improve the current spreading performance, compared with an AZO TCL. Experimentally, the specific contact resistance of the studied Al/AZO LED is reduced by about 27.6%, compared with an AZO LED. In addition, under an operating current of 20 mA, the forward voltage and light output power (LOP) of the studied Al/AZO LED are decreased by 0.15 V and increased by 19.5%, respectively. Uniform and enhanced intensities are also found in light emission mapping images of the studied Al/AZO LED. Consequently, based on benefits including simple structure and improved electrical and optical properties, the studied Al/AZO TCL is suitable for GaN-based LED applications.

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Study of a GaN-Based LED with an Al/AZO Composite Transparent Conductive Layer

Abstract

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