Study of a GaN-Based Light-Emitting Diode with a GaO Current Blocking Layer and a GaO Surface Passivation Layer

Ching Chuan Hsu, Yan Ren Hou, Jing Shiuan Niu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A new device structure, which includes a Ga2O3 current blocking layer (CBL) and a Ga2O3 surface passivation layer (SPL), is used to fabricate a GaN-based light-emitting diode (LED). Due to the inherent properties of Ga2O3 material, the current spreading phenomenon can be effectively improved and the surface leakage current and Fresnel reflection can be remarkably reduced. The appropriate thicknesses of the Ga2O3 CBL and SPL, according to the results from series experiments, are 10 and 50 nm, respectively. In an experiment, under an injection current density of 100 A/cm2, the studied LED device with a 10 nm-thick Ga2O3 CBL and a 50 nm-thick Ga2O3 SPL shows enhancements of 76.8%, 60.7%, 76.8%, and 56.2% in light output power (LOP), luminous efficacy, external quantum efficiency (EQE), and wall-plug efficiency, respectively, in comparison to a conventional LED without the designed structure. In addition, the studied LED exhibits obvious improvement in far-field radiation pattern compared to the conventional LED device. Thus, the studied structure, which includes an appropriate Ga2O3 CBL and SPL, offers a promising route to fabricate high-performance GaN-based LEDs.

Original languageEnglish
Article number9487002
Pages (from-to)3894-3900
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume68
Issue number8
DOIs
Publication statusPublished - 2021 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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