A newly designed high-barrier-gate Ga0.51In0.49P/InxGa1-xAs/GaAs pseudomorphic transistor with a step-compositioned channel (SC2) and bottomside delta-doped sheet (BD2S) structure has been fabricated successfully and studied. For a 1 × 100 μm2 studied device, a high gate-to-drain breakdown voltage over 30 V is found. In addition, an available output current density up to 826 mA mm-1 at a high gate voltage of 2.5 V, a maximum transconductance of 201 mS mm-1 with a very broad transconductance operation regime of 3 V of gate bias (565 mA mm-1 of drain current density) and a high dc gain ratio of 575 are obtained, simultaneously. Meanwhile, the maximum values of the unity current-gain cut-off frequency fT and oscillation frequency fmax are 16 and 34 GHz, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry