Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure

Kuan Po Lin, Chih Hung Yen, Wen Lung Chang, Kuo Hui Yu, Kun Wei Lin, Wen Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A newly designed high-barrier-gate Ga0.51In0.49P/InxGa1-xAs/GaAs pseudomorphic transistor with a step-compositioned channel (SC2) and bottomside delta-doped sheet (BD2S) structure has been fabricated successfully and studied. For a 1 × 100 μm2 studied device, a high gate-to-drain breakdown voltage over 30 V is found. In addition, an available output current density up to 826 mA mm-1 at a high gate voltage of 2.5 V, a maximum transconductance of 201 mS mm-1 with a very broad transconductance operation regime of 3 V of gate bias (565 mA mm-1 of drain current density) and a high dc gain ratio of 575 are obtained, simultaneously. Meanwhile, the maximum values of the unity current-gain cut-off frequency fT and oscillation frequency fmax are 16 and 34 GHz, respectively.

Original languageEnglish
Pages (from-to)643-647
Number of pages5
JournalSemiconductor Science and Technology
Volume15
Issue number6
DOIs
Publication statusPublished - 2000 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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