Study of a new field-effect resistive hydrogen sensor based on a Pd/ Oxide/AlGaAs transistor

Ching Wen Hung; Hung Chi Chang; Yan Ying Tsai; Po Hsien Lai; Ssu I. Fu; Tzu Pin Chen; Huey Ing Chen; Wen Chau Liu

doi:10.1109/TED.2007.893813

Study of a new field-effect resistive hydrogen sensor based on a Pd/ Oxide/AlGaAs transistor

Ching Wen Hung, Hung Chi Chang, Yan Ying Tsai, Po Hsien Lai, Ssu I. Fu, Tzu Pin Chen, Huey Ing Chen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A new and interesting field-effect resistive hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based pseudomorphic high-electron-mobility transistor structure and high hydrogen sensitivity of a palladium (Pd) metal, is studied and demonstrated. An oxide layer between Pd and AlGaAs is used to increase the number of hydrogen adsorption sites, and improve hydrogen detection sensitivity. A simple model is employed to interpret the hydrogen adsorption and sensing mechanism. The dissociation of H₂, diffusion of H atoms and formation of a dipolar layer cause a significant decrease in channel resistance. In comparison with other resistor-type hydrogen sensors, the studied device demonstrates the considerable advantages of lower detection limit (< 4.3 ppm H₂/air) and higher sensitivity (24.7% in 9970 ppm H₂/air) at room temperature. Also, the studied device exhibits a smaller resistance (several 10 Ω) and a smaller operating voltage (≤ 0.3 V) which are superior to other resistive sensors with typically larger resistances (ranged from kiloohms to megaohms) and larger voltages (≥ 1 V). Consequentially, the studied resistive sensor provides the promise for low-power GaAs-based electronic and microelectromechanical-system applications.

Original language	English
Pages (from-to)	1224-1231
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	5
DOIs	https://doi.org/10.1109/TED.2007.893813
Publication status	Published - 2007 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2007.893813

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title = "Study of a new field-effect resistive hydrogen sensor based on a Pd/ Oxide/AlGaAs transistor",

abstract = "A new and interesting field-effect resistive hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based pseudomorphic high-electron-mobility transistor structure and high hydrogen sensitivity of a palladium (Pd) metal, is studied and demonstrated. An oxide layer between Pd and AlGaAs is used to increase the number of hydrogen adsorption sites, and improve hydrogen detection sensitivity. A simple model is employed to interpret the hydrogen adsorption and sensing mechanism. The dissociation of H2, diffusion of H atoms and formation of a dipolar layer cause a significant decrease in channel resistance. In comparison with other resistor-type hydrogen sensors, the studied device demonstrates the considerable advantages of lower detection limit (< 4.3 ppm H2/air) and higher sensitivity (24.7% in 9970 ppm H2/air) at room temperature. Also, the studied device exhibits a smaller resistance (several 10 Ω) and a smaller operating voltage (≤ 0.3 V) which are superior to other resistive sensors with typically larger resistances (ranged from kiloohms to megaohms) and larger voltages (≥ 1 V). Consequentially, the studied resistive sensor provides the promise for low-power GaAs-based electronic and microelectromechanical-system applications.",

author = "Hung, {Ching Wen} and Chang, {Hung Chi} and Tsai, {Yan Ying} and Lai, {Po Hsien} and Fu, {Ssu I.} and Chen, {Tzu Pin} and Chen, {Huey Ing} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received September 1, 2006. This work was supported in part by the National Science Council of the Republic of China under Contract No. NSC-95-2221-E-006-426-MY2. The review of this paper was arranged by Editor K. Najafi.",

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AU - Hung, Ching Wen

AU - Chang, Hung Chi

AU - Tsai, Yan Ying

AU - Lai, Po Hsien

AU - Fu, Ssu I.

AU - Chen, Tzu Pin

AU - Chen, Huey Ing

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received September 1, 2006. This work was supported in part by the National Science Council of the Republic of China under Contract No. NSC-95-2221-E-006-426-MY2. The review of this paper was arranged by Editor K. Najafi.

PY - 2007/5

Y1 - 2007/5

N2 - A new and interesting field-effect resistive hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based pseudomorphic high-electron-mobility transistor structure and high hydrogen sensitivity of a palladium (Pd) metal, is studied and demonstrated. An oxide layer between Pd and AlGaAs is used to increase the number of hydrogen adsorption sites, and improve hydrogen detection sensitivity. A simple model is employed to interpret the hydrogen adsorption and sensing mechanism. The dissociation of H2, diffusion of H atoms and formation of a dipolar layer cause a significant decrease in channel resistance. In comparison with other resistor-type hydrogen sensors, the studied device demonstrates the considerable advantages of lower detection limit (< 4.3 ppm H2/air) and higher sensitivity (24.7% in 9970 ppm H2/air) at room temperature. Also, the studied device exhibits a smaller resistance (several 10 Ω) and a smaller operating voltage (≤ 0.3 V) which are superior to other resistive sensors with typically larger resistances (ranged from kiloohms to megaohms) and larger voltages (≥ 1 V). Consequentially, the studied resistive sensor provides the promise for low-power GaAs-based electronic and microelectromechanical-system applications.

AB - A new and interesting field-effect resistive hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based pseudomorphic high-electron-mobility transistor structure and high hydrogen sensitivity of a palladium (Pd) metal, is studied and demonstrated. An oxide layer between Pd and AlGaAs is used to increase the number of hydrogen adsorption sites, and improve hydrogen detection sensitivity. A simple model is employed to interpret the hydrogen adsorption and sensing mechanism. The dissociation of H2, diffusion of H atoms and formation of a dipolar layer cause a significant decrease in channel resistance. In comparison with other resistor-type hydrogen sensors, the studied device demonstrates the considerable advantages of lower detection limit (< 4.3 ppm H2/air) and higher sensitivity (24.7% in 9970 ppm H2/air) at room temperature. Also, the studied device exhibits a smaller resistance (several 10 Ω) and a smaller operating voltage (≤ 0.3 V) which are superior to other resistive sensors with typically larger resistances (ranged from kiloohms to megaohms) and larger voltages (≥ 1 V). Consequentially, the studied resistive sensor provides the promise for low-power GaAs-based electronic and microelectromechanical-system applications.

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Study of a new field-effect resistive hydrogen sensor based on a Pd/ Oxide/AlGaAs transistor

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