TY - JOUR
T1 - Study of a New Hydrogen Sensor Based on the Synthesis of a Sputtered In-Sn-Zn-O Thin Film and Evaporated Palladium Nanoparticles
AU - Yao, Pao Chi
AU - Kuo, Chi Kang
AU - Wang, Jung Chuan
AU - Chu, Pai Yi
AU - Hsu, Wei Chou
AU - Liu, Wen Chau
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2024/4/1
Y1 - 2024/4/1
N2 - A new and interesting hydrogen (H2) gas sensor based on an In-Sn-Zn-O (ITZO) thin film modified with palladium nanoparticles (Pd NPs) on a sapphire (Al2O3) substrate is manufactured and investigated herein. High-resolution scanning electron microscopy (HRSEM), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) are employed to study intrinsic material properties. Experimentally, under 1% H2/air gas, the fabricated Pd NP/ITZO sensor exhibits prominent sensing performance, including a higher sensing response {R} of 12890 with a response (recovery) time of 106 s (13 s), and a lower detectable content of 1 ppm H2/air at 225 °C is obtained. Moreover, the sensor shows high reproducibility, excellent selectivity, and long-term stability (91 days) toward H2 gas.
AB - A new and interesting hydrogen (H2) gas sensor based on an In-Sn-Zn-O (ITZO) thin film modified with palladium nanoparticles (Pd NPs) on a sapphire (Al2O3) substrate is manufactured and investigated herein. High-resolution scanning electron microscopy (HRSEM), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) are employed to study intrinsic material properties. Experimentally, under 1% H2/air gas, the fabricated Pd NP/ITZO sensor exhibits prominent sensing performance, including a higher sensing response {R} of 12890 with a response (recovery) time of 106 s (13 s), and a lower detectable content of 1 ppm H2/air at 225 °C is obtained. Moreover, the sensor shows high reproducibility, excellent selectivity, and long-term stability (91 days) toward H2 gas.
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U2 - 10.1109/TED.2024.3361844
DO - 10.1109/TED.2024.3361844
M3 - Article
AN - SCOPUS:85185375752
SN - 0018-9383
VL - 71
SP - 2612
EP - 2617
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
M1 - 10438356
ER -