Study of an AlGaInP-based light-emitting diode with a modulation-doped multiquantum-well (MD-MQW) structure

Chih Hung Yen, Yi Jung Liu, Tzu Pin Chen, Li Yang Chen, Tsung Han Tsai, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

An AlGaInP-based multiquantum-well (MQW) light-emitting diode (LED) with an n-type modulation-doped (MD) structure, grown by metal-organic vapor-phase epitaxy, is fabricated and studied. Experimental results indicate that a lower turn-on voltage and dynamic resistance, higher output power, and smaller wavelength shift, as compared to a conventional undoped-MQW LED, are obtained. The studied n-type MD-MQW LED also exhibits a higher external quantum efficiency of 7.2% and a larger maximum light output power. The junction temperature of the studied MD-MQW LED also shows a 12 °C reduction, at 200 mA, as compared to a conventional one. These positive results are mainly attributed to the presence of a higher electron concentration in the MD-MQW active region.

Original languageEnglish
Pages (from-to)609-611
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number10
DOIs
Publication statusPublished - 2009 May 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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