Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy

Yu Yao Lin, Adam T. Neal, Shin Mou, Jian V. Li

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The authors use isothermal capacitance transient spectroscopy to detect three deep defects located at approximately 0.6, 0.8, and 1.0 eV below the conduction band of β-Ga2O3 materials. The electrical properties of these defects such as their capture cross sections and concentrations are characterized, and their potentially adverse effects on power electronic devices are discussed. Because the isothermal capacitance transient spectroscopy method is implementable by instruments intended for steady-state capacitance-voltage measurement, it is promising for use as an effective characterization and monitoring tool for deep defects in β-Ga2O3 and other wide bandgap semiconductors.

Original languageEnglish
Article number041204
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Issue number4
Publication statusPublished - 2019 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy'. Together they form a unique fingerprint.

Cite this