Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy

Yu Yao Lin; Adam T. Neal; Shin Mou; Jian V. Li

doi:10.1116/1.5109088

Study of defects in β-Ga₂O₃ by isothermal capacitance transient spectroscopy

Yu Yao Lin, Adam T. Neal, Shin Mou, Jian V. Li

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The authors use isothermal capacitance transient spectroscopy to detect three deep defects located at approximately 0.6, 0.8, and 1.0 eV below the conduction band of β-Ga₂O₃ materials. The electrical properties of these defects such as their capture cross sections and concentrations are characterized, and their potentially adverse effects on power electronic devices are discussed. Because the isothermal capacitance transient spectroscopy method is implementable by instruments intended for steady-state capacitance-voltage measurement, it is promising for use as an effective characterization and monitoring tool for deep defects in β-Ga₂O₃ and other wide bandgap semiconductors.

Original language	English
Article number	041204
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	37
Issue number	4
DOIs	https://doi.org/10.1116/1.5109088
Publication status	Published - 2019 Jul 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy",

abstract = "The authors use isothermal capacitance transient spectroscopy to detect three deep defects located at approximately 0.6, 0.8, and 1.0 eV below the conduction band of β-Ga2O3 materials. The electrical properties of these defects such as their capture cross sections and concentrations are characterized, and their potentially adverse effects on power electronic devices are discussed. Because the isothermal capacitance transient spectroscopy method is implementable by instruments intended for steady-state capacitance-voltage measurement, it is promising for use as an effective characterization and monitoring tool for deep defects in β-Ga2O3 and other wide bandgap semiconductors.",

author = "Lin, {Yu Yao} and Neal, {Adam T.} and Shin Mou and Li, {Jian V.}",

note = "Funding Information: This research is supported by Taiwan Ministry of Science and Technology (Grant No. MOST 107-2218-E-006-022-MY3). J.V.L. acknowledges support by U.S. Air Force Summer Faculty Fellowship Program. Publisher Copyright: {\textcopyright} 2019 Author(s).",

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T1 - Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy

AU - Lin, Yu Yao

AU - Neal, Adam T.

AU - Mou, Shin

AU - Li, Jian V.

N1 - Funding Information: This research is supported by Taiwan Ministry of Science and Technology (Grant No. MOST 107-2218-E-006-022-MY3). J.V.L. acknowledges support by U.S. Air Force Summer Faculty Fellowship Program. Publisher Copyright: © 2019 Author(s).

PY - 2019/7/1

Y1 - 2019/7/1

N2 - The authors use isothermal capacitance transient spectroscopy to detect three deep defects located at approximately 0.6, 0.8, and 1.0 eV below the conduction band of β-Ga2O3 materials. The electrical properties of these defects such as their capture cross sections and concentrations are characterized, and their potentially adverse effects on power electronic devices are discussed. Because the isothermal capacitance transient spectroscopy method is implementable by instruments intended for steady-state capacitance-voltage measurement, it is promising for use as an effective characterization and monitoring tool for deep defects in β-Ga2O3 and other wide bandgap semiconductors.

AB - The authors use isothermal capacitance transient spectroscopy to detect three deep defects located at approximately 0.6, 0.8, and 1.0 eV below the conduction band of β-Ga2O3 materials. The electrical properties of these defects such as their capture cross sections and concentrations are characterized, and their potentially adverse effects on power electronic devices are discussed. Because the isothermal capacitance transient spectroscopy method is implementable by instruments intended for steady-state capacitance-voltage measurement, it is promising for use as an effective characterization and monitoring tool for deep defects in β-Ga2O3 and other wide bandgap semiconductors.

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Study of defects in β-Ga₂O₃ by isothermal capacitance transient spectroscopy

Abstract

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