In this work, theoretical analysis for a high current density and high transconductance quantum-well HEMT with a double-side delta-doping layers structure is presented. The present calculation is based on a numerical self-consistent solutions of Poisson's and Schrodinger's equations by assuming charge neutrality over the entire device. From the calculated results, physical details of current density and transconductance are evaluated and discussed. An optimum structure with a double delta-doping concentration of 5×1012 cm-2 and 1013 cm-2 are proposed.
|Number of pages||4|
|Publication status||Published - 1997 Jan 1|
|Event||Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia|
Duration: 1996 Nov 26 → 1996 Nov 28
|Other||Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE|
|Period||96-11-26 → 96-11-28|
All Science Journal Classification (ASJC) codes