Study of delta-doping concentration effect on a novel quantum-well HEMT structure

Ching Yuan Cheng, Shui-Jinn Wang, Jia Chuan Lin, Ying Che Luo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, theoretical analysis for a high current density and high transconductance quantum-well HEMT with a double-side delta-doping layers structure is presented. The present calculation is based on a numerical self-consistent solutions of Poisson's and Schrodinger's equations by assuming charge neutrality over the entire device. From the calculated results, physical details of current density and transconductance are evaluated and discussed. An optimum structure with a double delta-doping concentration of 5×1012 cm-2 and 1013 cm-2 are proposed.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherIEEE
Pages209-212
Number of pages4
Publication statusPublished - 1997
EventProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
Duration: 1996 Nov 261996 Nov 28

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
CityPenang, Malaysia
Period96-11-2696-11-28

Fingerprint

Transconductance
High electron mobility transistors
Semiconductor quantum wells
Current density
Doping (additives)
Schrodinger equation
Poisson equation

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Cheng, C. Y., Wang, S-J., Lin, J. C., & Luo, Y. C. (1997). Study of delta-doping concentration effect on a novel quantum-well HEMT structure. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 209-212). IEEE.
Cheng, Ching Yuan ; Wang, Shui-Jinn ; Lin, Jia Chuan ; Luo, Ying Che. / Study of delta-doping concentration effect on a novel quantum-well HEMT structure. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, 1997. pp. 209-212
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abstract = "In this work, theoretical analysis for a high current density and high transconductance quantum-well HEMT with a double-side delta-doping layers structure is presented. The present calculation is based on a numerical self-consistent solutions of Poisson's and Schrodinger's equations by assuming charge neutrality over the entire device. From the calculated results, physical details of current density and transconductance are evaluated and discussed. An optimum structure with a double delta-doping concentration of 5×1012 cm-2 and 1013 cm-2 are proposed.",
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Cheng, CY, Wang, S-J, Lin, JC & Luo, YC 1997, Study of delta-doping concentration effect on a novel quantum-well HEMT structure. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, pp. 209-212, Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, 96-11-26.

Study of delta-doping concentration effect on a novel quantum-well HEMT structure. / Cheng, Ching Yuan; Wang, Shui-Jinn; Lin, Jia Chuan; Luo, Ying Che.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, 1997. p. 209-212.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Study of delta-doping concentration effect on a novel quantum-well HEMT structure

AU - Cheng, Ching Yuan

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AU - Lin, Jia Chuan

AU - Luo, Ying Che

PY - 1997

Y1 - 1997

N2 - In this work, theoretical analysis for a high current density and high transconductance quantum-well HEMT with a double-side delta-doping layers structure is presented. The present calculation is based on a numerical self-consistent solutions of Poisson's and Schrodinger's equations by assuming charge neutrality over the entire device. From the calculated results, physical details of current density and transconductance are evaluated and discussed. An optimum structure with a double delta-doping concentration of 5×1012 cm-2 and 1013 cm-2 are proposed.

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Cheng CY, Wang S-J, Lin JC, Luo YC. Study of delta-doping concentration effect on a novel quantum-well HEMT structure. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE. 1997. p. 209-212