Study of delta-doping concentration effect on a novel quantum-well HEMT structure

Ching Yuan Cheng, Shui-Jinn Wang, Jia Chuan Lin, Ying Che Luo

Research output: Contribution to conferencePaper

Abstract

In this work, theoretical analysis for a high current density and high transconductance quantum-well HEMT with a double-side delta-doping layers structure is presented. The present calculation is based on a numerical self-consistent solutions of Poisson's and Schrodinger's equations by assuming charge neutrality over the entire device. From the calculated results, physical details of current density and transconductance are evaluated and discussed. An optimum structure with a double delta-doping concentration of 5×1012 cm-2 and 1013 cm-2 are proposed.

Original languageEnglish
Pages209-212
Number of pages4
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
Duration: 1996 Nov 261996 Nov 28

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
CityPenang, Malaysia
Period96-11-2696-11-28

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Study of delta-doping concentration effect on a novel quantum-well HEMT structure'. Together they form a unique fingerprint.

  • Cite this

    Cheng, C. Y., Wang, S-J., Lin, J. C., & Luo, Y. C. (1997). Study of delta-doping concentration effect on a novel quantum-well HEMT structure. 209-212. Paper presented at Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, .