Study of diffusion and quality control for CoSi2 formation by oxide-mediated cobalt silicidation with Ti capping

Juin Jie Chang; Chuan Pu Liu; Tsung Eong Hsieh; Ying Lang Wang

doi:10.1116/1.2006132

Study of diffusion and quality control for CoSi₂ formation by oxide-mediated cobalt silicidation with Ti capping

Juin Jie Chang, Chuan Pu Liu, Tsung Eong Hsieh, Ying Lang Wang

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The mechanism for the enhancement of Co Si2 thin film formation and film quality control by oxide-mediated cobalt silicidation with a Ti-capping layer is discussed. It is found that Ti absorbs oxygen from the Si Ox layer, which induces weak points in the Si Ox layer and then enhances Co diffusion as well as Co Si2 formation. The control of the reactions between Ti and Si Ox is significant because a low reaction rate cannot form a suitable thickness of Co Si2 film, whereas a high reaction rate tends to form the highly resistive CoSi phase. In addition, to maintain the Si Ox layer still existing after annealing is also important because if no Si Ox layer remains, unreacted Co would react with Si directly to form the highly resistive phase of CoSi, leading to the smooth interface between Co Si2 and Si and dense bulk Co Si2 thin film being destroyed.

Original language	English
Pages (from-to)	1952-1955
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	5
DOIs	https://doi.org/10.1116/1.2006132
Publication status	Published - 2005

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.2006132

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@article{875f5c3f5f8b413a895493f1dc2b32f6,

title = "Study of diffusion and quality control for CoSi2 formation by oxide-mediated cobalt silicidation with Ti capping",

abstract = "The mechanism for the enhancement of Co Si2 thin film formation and film quality control by oxide-mediated cobalt silicidation with a Ti-capping layer is discussed. It is found that Ti absorbs oxygen from the Si Ox layer, which induces weak points in the Si Ox layer and then enhances Co diffusion as well as Co Si2 formation. The control of the reactions between Ti and Si Ox is significant because a low reaction rate cannot form a suitable thickness of Co Si2 film, whereas a high reaction rate tends to form the highly resistive CoSi phase. In addition, to maintain the Si Ox layer still existing after annealing is also important because if no Si Ox layer remains, unreacted Co would react with Si directly to form the highly resistive phase of CoSi, leading to the smooth interface between Co Si2 and Si and dense bulk Co Si2 thin film being destroyed.",

author = "Chang, {Juin Jie} and Liu, {Chuan Pu} and Hsieh, {Tsung Eong} and Wang, {Ying Lang}",

note = "Funding Information: The work is supported by NSC, Taiwan under Project No. NSC92-2120-E006-003. The authors thank Yung-Lung Hsu for analysis assistance. They are also grateful for the use of the high-resolution electron microscopy, which is supported and maintained by the Center for Micro/nano Technology Research at National Cheng Kung University, Taiwan. ",

year = "2005",

doi = "10.1116/1.2006132",

language = "English",

volume = "23",

pages = "1952--1955",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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T1 - Study of diffusion and quality control for CoSi2 formation by oxide-mediated cobalt silicidation with Ti capping

AU - Chang, Juin Jie

AU - Liu, Chuan Pu

AU - Hsieh, Tsung Eong

AU - Wang, Ying Lang

N1 - Funding Information: The work is supported by NSC, Taiwan under Project No. NSC92-2120-E006-003. The authors thank Yung-Lung Hsu for analysis assistance. They are also grateful for the use of the high-resolution electron microscopy, which is supported and maintained by the Center for Micro/nano Technology Research at National Cheng Kung University, Taiwan.

PY - 2005

Y1 - 2005

N2 - The mechanism for the enhancement of Co Si2 thin film formation and film quality control by oxide-mediated cobalt silicidation with a Ti-capping layer is discussed. It is found that Ti absorbs oxygen from the Si Ox layer, which induces weak points in the Si Ox layer and then enhances Co diffusion as well as Co Si2 formation. The control of the reactions between Ti and Si Ox is significant because a low reaction rate cannot form a suitable thickness of Co Si2 film, whereas a high reaction rate tends to form the highly resistive CoSi phase. In addition, to maintain the Si Ox layer still existing after annealing is also important because if no Si Ox layer remains, unreacted Co would react with Si directly to form the highly resistive phase of CoSi, leading to the smooth interface between Co Si2 and Si and dense bulk Co Si2 thin film being destroyed.

AB - The mechanism for the enhancement of Co Si2 thin film formation and film quality control by oxide-mediated cobalt silicidation with a Ti-capping layer is discussed. It is found that Ti absorbs oxygen from the Si Ox layer, which induces weak points in the Si Ox layer and then enhances Co diffusion as well as Co Si2 formation. The control of the reactions between Ti and Si Ox is significant because a low reaction rate cannot form a suitable thickness of Co Si2 film, whereas a high reaction rate tends to form the highly resistive CoSi phase. In addition, to maintain the Si Ox layer still existing after annealing is also important because if no Si Ox layer remains, unreacted Co would react with Si directly to form the highly resistive phase of CoSi, leading to the smooth interface between Co Si2 and Si and dense bulk Co Si2 thin film being destroyed.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Study of diffusion and quality control for CoSi₂ formation by oxide-mediated cobalt silicidation with Ti capping

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