Study of diffusion barriers for Au metal on liquid phase oxidized GaAs

Po Wen Sze; Jian Jiun Huang; Dei Wei Chou; Yeong Her Wang

doi:10.1116/1.2366545

Study of diffusion barriers for Au metal on liquid phase oxidized GaAs

Po Wen Sze, Jian Jiun Huang, Dei Wei Chou, Yeong Her Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

TiW, TiN, Pd, and Mo as the diffusion barriers (DBs) in Au/DB/GaAs native oxide multilayer structures are investigated. The GaAs native oxides are prepared by liquid phase oxidation, and the results indicate that TiW and Mo films can effectively block Au diffusion at temperatures of up to 550 °C for 30 min. However, TiN and Pd films can effectively block Au diffusion only at 450 °C for 30 min. The failure of TiN and Pd appears related to the embedded oxygen in the barrier layers which cause the interdiffusion between Au and the barrier films. In comparison, TiW and Mo show better blocking properties that prevent Au from diffusing into oxide films. They also act as a diffusion barrier even at temperatures above 550 °C.

Original language	English
Pages (from-to)	2640-2644
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	6
DOIs	https://doi.org/10.1116/1.2366545
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.2366545

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@article{28c0399332574014b73091ce86b2a2af,

title = "Study of diffusion barriers for Au metal on liquid phase oxidized GaAs",

abstract = "TiW, TiN, Pd, and Mo as the diffusion barriers (DBs) in Au/DB/GaAs native oxide multilayer structures are investigated. The GaAs native oxides are prepared by liquid phase oxidation, and the results indicate that TiW and Mo films can effectively block Au diffusion at temperatures of up to 550 °C for 30 min. However, TiN and Pd films can effectively block Au diffusion only at 450 °C for 30 min. The failure of TiN and Pd appears related to the embedded oxygen in the barrier layers which cause the interdiffusion between Au and the barrier films. In comparison, TiW and Mo show better blocking properties that prevent Au from diffusing into oxide films. They also act as a diffusion barrier even at temperatures above 550 °C.",

author = "Sze, {Po Wen} and Huang, {Jian Jiun} and Chou, {Dei Wei} and Wang, {Yeong Her}",

note = "Funding Information: This work was supported in part by the National Science Council of Taiwan under Contract Nos. NSC94-2215-E-224-002 and NSC 94-2215-E-006-001 and the Ministry of Education (MOE) Program for Promoting Academic Excellence of Universities under Grant No. A-91E-FA08-1-4. Likewise, due acknowledgement is also made to the Foundation of Chen, Jieh-Chen Scholarship of Tainan, Taiwan.",

year = "2006",

doi = "10.1116/1.2366545",

language = "English",

volume = "24",

pages = "2640--2644",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Study of diffusion barriers for Au metal on liquid phase oxidized GaAs

AU - Sze, Po Wen

AU - Huang, Jian Jiun

AU - Chou, Dei Wei

AU - Wang, Yeong Her

N1 - Funding Information: This work was supported in part by the National Science Council of Taiwan under Contract Nos. NSC94-2215-E-224-002 and NSC 94-2215-E-006-001 and the Ministry of Education (MOE) Program for Promoting Academic Excellence of Universities under Grant No. A-91E-FA08-1-4. Likewise, due acknowledgement is also made to the Foundation of Chen, Jieh-Chen Scholarship of Tainan, Taiwan.

PY - 2006

Y1 - 2006

N2 - TiW, TiN, Pd, and Mo as the diffusion barriers (DBs) in Au/DB/GaAs native oxide multilayer structures are investigated. The GaAs native oxides are prepared by liquid phase oxidation, and the results indicate that TiW and Mo films can effectively block Au diffusion at temperatures of up to 550 °C for 30 min. However, TiN and Pd films can effectively block Au diffusion only at 450 °C for 30 min. The failure of TiN and Pd appears related to the embedded oxygen in the barrier layers which cause the interdiffusion between Au and the barrier films. In comparison, TiW and Mo show better blocking properties that prevent Au from diffusing into oxide films. They also act as a diffusion barrier even at temperatures above 550 °C.

AB - TiW, TiN, Pd, and Mo as the diffusion barriers (DBs) in Au/DB/GaAs native oxide multilayer structures are investigated. The GaAs native oxides are prepared by liquid phase oxidation, and the results indicate that TiW and Mo films can effectively block Au diffusion at temperatures of up to 550 °C for 30 min. However, TiN and Pd films can effectively block Au diffusion only at 450 °C for 30 min. The failure of TiN and Pd appears related to the embedded oxygen in the barrier layers which cause the interdiffusion between Au and the barrier films. In comparison, TiW and Mo show better blocking properties that prevent Au from diffusing into oxide films. They also act as a diffusion barrier even at temperatures above 550 °C.

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DO - 10.1116/1.2366545

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SN - 1071-1023

VL - 24

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Study of diffusion barriers for Au metal on liquid phase oxidized GaAs

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