Study of efficiency-droop mechanism in vertical red light-emitting diodes using electrical-to-optical impulse responses

J. W. Shi, F. M. Kuo, Che Wei Lin, Wei Chen, M. L. Lee, L. J. Yan, Jinn-Kong Sheu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The mechanism responsible for the efficiency droop in AlGaInP based vertically-structured red light-emitting diodes (LEDs) is investigated using dynamic measurement techniques. Short electrical pulses (∼100ps) are pumped into this device and the output optical pulses probed using high-speed photo-receiver circuits. From this, the internal carrier dynamic inside the device can be investigated by use of the measured electrical-to-optical (E-O) impulse responses. Results show that the E-O responses measured under different bias currents are all invariant from room temperature to ∼100°. This is contrary to most results reported for AlGaInP based red LEDs, which usually exhibit a shortening in the response time and degradation in output power with the increase of ambient temperature. According to these measurement results and the extracted fall-time constants of the E-O impulse responses, the origin of the efficiency droop in our vertical LED structure, which has good heat-sinking, is not due to thermally induced carrier leakage, but rather should be attributed to defect recombination and the saturation of spontaneous recombination processes.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XVI
DOIs
Publication statusPublished - 2012 Mar 5
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States
Duration: 2012 Jan 242012 Jan 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8278
ISSN (Print)0277-786X

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
CountryUnited States
CitySan Francisco, CA
Period12-01-2412-01-26

Fingerprint

Red Light
Impulse Response
Impulse response
Diode
Light emitting diodes
impulses
light emitting diodes
Vertical
Recombination
Bias currents
sinking
output
Output
Laser pulses
Measurement Techniques
Time Constant
pulses
Leakage
Response Time
time constant

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Shi, J. W., Kuo, F. M., Lin, C. W., Chen, W., Lee, M. L., Yan, L. J., & Sheu, J-K. (2012). Study of efficiency-droop mechanism in vertical red light-emitting diodes using electrical-to-optical impulse responses. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI [82781S] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8278). https://doi.org/10.1117/12.906990
Shi, J. W. ; Kuo, F. M. ; Lin, Che Wei ; Chen, Wei ; Lee, M. L. ; Yan, L. J. ; Sheu, Jinn-Kong. / Study of efficiency-droop mechanism in vertical red light-emitting diodes using electrical-to-optical impulse responses. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "The mechanism responsible for the efficiency droop in AlGaInP based vertically-structured red light-emitting diodes (LEDs) is investigated using dynamic measurement techniques. Short electrical pulses (∼100ps) are pumped into this device and the output optical pulses probed using high-speed photo-receiver circuits. From this, the internal carrier dynamic inside the device can be investigated by use of the measured electrical-to-optical (E-O) impulse responses. Results show that the E-O responses measured under different bias currents are all invariant from room temperature to ∼100°. This is contrary to most results reported for AlGaInP based red LEDs, which usually exhibit a shortening in the response time and degradation in output power with the increase of ambient temperature. According to these measurement results and the extracted fall-time constants of the E-O impulse responses, the origin of the efficiency droop in our vertical LED structure, which has good heat-sinking, is not due to thermally induced carrier leakage, but rather should be attributed to defect recombination and the saturation of spontaneous recombination processes.",
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Shi, JW, Kuo, FM, Lin, CW, Chen, W, Lee, ML, Yan, LJ & Sheu, J-K 2012, Study of efficiency-droop mechanism in vertical red light-emitting diodes using electrical-to-optical impulse responses. in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI., 82781S, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, San Francisco, CA, United States, 12-01-24. https://doi.org/10.1117/12.906990

Study of efficiency-droop mechanism in vertical red light-emitting diodes using electrical-to-optical impulse responses. / Shi, J. W.; Kuo, F. M.; Lin, Che Wei; Chen, Wei; Lee, M. L.; Yan, L. J.; Sheu, Jinn-Kong.

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. 82781S (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8278).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - The mechanism responsible for the efficiency droop in AlGaInP based vertically-structured red light-emitting diodes (LEDs) is investigated using dynamic measurement techniques. Short electrical pulses (∼100ps) are pumped into this device and the output optical pulses probed using high-speed photo-receiver circuits. From this, the internal carrier dynamic inside the device can be investigated by use of the measured electrical-to-optical (E-O) impulse responses. Results show that the E-O responses measured under different bias currents are all invariant from room temperature to ∼100°. This is contrary to most results reported for AlGaInP based red LEDs, which usually exhibit a shortening in the response time and degradation in output power with the increase of ambient temperature. According to these measurement results and the extracted fall-time constants of the E-O impulse responses, the origin of the efficiency droop in our vertical LED structure, which has good heat-sinking, is not due to thermally induced carrier leakage, but rather should be attributed to defect recombination and the saturation of spontaneous recombination processes.

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Shi JW, Kuo FM, Lin CW, Chen W, Lee ML, Yan LJ et al. Study of efficiency-droop mechanism in vertical red light-emitting diodes using electrical-to-optical impulse responses. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. 82781S. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.906990