Study of electric field enhanced emission of deep levels using a new emission spectroscopic technique

T. T. Nguyen, K. L. Wang, G. P. Li

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

A small capture pulse followed by an emission pulse was used to study the carrier emission of defect centers in the presence of electric field. The capture pulse is used to fill a localized group of centers with electrons in n-type semiconductors and a reverse pulse causes these centers to emit electrons at an electric field determined by the reverse-bias pulse. The enhancement of the emission due to the presence of a high electric field can be determined readily from the change of capacitance transients detected using a conventional deep level transient spectroscopy setup. In this technique, a low dc bias is used during the measurement of the capacitance transients and thus results in a high sensitivity of detection. Calculation and experimental results are given for the Ec -0.35 eV center in GaAs.

Original languageEnglish
Pages (from-to)211-213
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number2
DOIs
Publication statusPublished - 1984

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Study of electric field enhanced emission of deep levels using a new emission spectroscopic technique'. Together they form a unique fingerprint.

Cite this