Study of electrical fatigue test in gold-coated siliver-4 wt.% palladium bonding wire

Research output: Contribution to journalArticle

Abstract

Present study investigates the effects of the electrical fatigue test on the microstructures, electrical properties and elemental distribution of gold (Au)-coated Ag-4Pd (ACA4P) alloy wire. The electrical fatigue test is an important method for estimating the reliability of electronic devices to cyclic thermal stress caused by bias-induced Joule heat. In the bias test, the thermal diffusion behavior of Au atoms on the wire surface was more intense with increasing current density. The Au atoms diffused along the grain boundary of the wire and finally distributed throughout the wire matrix. In the bias fatigue test, the electrical resistances of the wire and ball bond decreased, and then increased as the bias cycle increased to 6000 cycles. An increase in grain size of the wire and ball bonded wires by bias-induced thermal energy caused their electrical resistances to decrease. Poisson's effect caused the diameter of the wire to decrease, and thus increased the resistance of the wire. The growth of Ag2Al intermetallic compounds (IMCs) at the bonding interface was responsible for the increase in the resistance of the ball bonded wire.

Original languageEnglish
Article number113502
JournalMicroelectronics Reliability
Volume103
DOIs
Publication statusPublished - 2019 Dec

Fingerprint

fatigue tests
Palladium
Gold
palladium
Fatigue of materials
wire
Wire
gold
balls
Acoustic impedance
electrical resistance
Atoms
cycles
Thermal diffusion
thermal diffusion
thermal stresses
Thermal energy
thermal energy
Thermal stress
Intermetallics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{4c0a0e4527de4972bb74c93ea0d7e339,
title = "Study of electrical fatigue test in gold-coated siliver-4 wt.{\%} palladium bonding wire",
abstract = "Present study investigates the effects of the electrical fatigue test on the microstructures, electrical properties and elemental distribution of gold (Au)-coated Ag-4Pd (ACA4P) alloy wire. The electrical fatigue test is an important method for estimating the reliability of electronic devices to cyclic thermal stress caused by bias-induced Joule heat. In the bias test, the thermal diffusion behavior of Au atoms on the wire surface was more intense with increasing current density. The Au atoms diffused along the grain boundary of the wire and finally distributed throughout the wire matrix. In the bias fatigue test, the electrical resistances of the wire and ball bond decreased, and then increased as the bias cycle increased to 6000 cycles. An increase in grain size of the wire and ball bonded wires by bias-induced thermal energy caused their electrical resistances to decrease. Poisson's effect caused the diameter of the wire to decrease, and thus increased the resistance of the wire. The growth of Ag2Al intermetallic compounds (IMCs) at the bonding interface was responsible for the increase in the resistance of the ball bonded wire.",
author = "Ho, {Chen Chin} and Chen, {Kuan Jen} and Hung, {Fei Yi} and Lui, {Truan Sheng}",
year = "2019",
month = "12",
doi = "10.1016/j.microrel.2019.113502",
language = "English",
volume = "103",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Study of electrical fatigue test in gold-coated siliver-4 wt.% palladium bonding wire

AU - Ho, Chen Chin

AU - Chen, Kuan Jen

AU - Hung, Fei Yi

AU - Lui, Truan Sheng

PY - 2019/12

Y1 - 2019/12

N2 - Present study investigates the effects of the electrical fatigue test on the microstructures, electrical properties and elemental distribution of gold (Au)-coated Ag-4Pd (ACA4P) alloy wire. The electrical fatigue test is an important method for estimating the reliability of electronic devices to cyclic thermal stress caused by bias-induced Joule heat. In the bias test, the thermal diffusion behavior of Au atoms on the wire surface was more intense with increasing current density. The Au atoms diffused along the grain boundary of the wire and finally distributed throughout the wire matrix. In the bias fatigue test, the electrical resistances of the wire and ball bond decreased, and then increased as the bias cycle increased to 6000 cycles. An increase in grain size of the wire and ball bonded wires by bias-induced thermal energy caused their electrical resistances to decrease. Poisson's effect caused the diameter of the wire to decrease, and thus increased the resistance of the wire. The growth of Ag2Al intermetallic compounds (IMCs) at the bonding interface was responsible for the increase in the resistance of the ball bonded wire.

AB - Present study investigates the effects of the electrical fatigue test on the microstructures, electrical properties and elemental distribution of gold (Au)-coated Ag-4Pd (ACA4P) alloy wire. The electrical fatigue test is an important method for estimating the reliability of electronic devices to cyclic thermal stress caused by bias-induced Joule heat. In the bias test, the thermal diffusion behavior of Au atoms on the wire surface was more intense with increasing current density. The Au atoms diffused along the grain boundary of the wire and finally distributed throughout the wire matrix. In the bias fatigue test, the electrical resistances of the wire and ball bond decreased, and then increased as the bias cycle increased to 6000 cycles. An increase in grain size of the wire and ball bonded wires by bias-induced thermal energy caused their electrical resistances to decrease. Poisson's effect caused the diameter of the wire to decrease, and thus increased the resistance of the wire. The growth of Ag2Al intermetallic compounds (IMCs) at the bonding interface was responsible for the increase in the resistance of the ball bonded wire.

UR - http://www.scopus.com/inward/record.url?scp=85073710636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073710636&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2019.113502

DO - 10.1016/j.microrel.2019.113502

M3 - Article

AN - SCOPUS:85073710636

VL - 103

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

M1 - 113502

ER -