Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors

Po Chin Huang; Ting Kuo Kang; Bo Chin Wang; San Lein Wu; Shoou Jinn Chang

doi:10.1143/JJAP.48.04C038

Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors

Po Chin Huang, Ting Kuo Kang, Bo Chin Wang, San Lein Wu, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.

Original language	English
Article number	04C038
Journal	Japanese journal of applied physics
Volume	48
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.04C038
Publication status	Published - 2009 Apr

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors",

abstract = "The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.",

author = "Huang, {Po Chin} and Kang, {Ting Kuo} and Wang, {Bo Chin} and Wu, {San Lein} and Chang, {Shoou Jinn}",

year = "2009",

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doi = "10.1143/JJAP.48.04C038",

language = "English",

volume = "48",

journal = "Japanese Journal of Applied Physics",

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T1 - Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors

AU - Huang, Po Chin

AU - Kang, Ting Kuo

AU - Wang, Bo Chin

AU - Wu, San Lein

AU - Chang, Shoou Jinn

PY - 2009/4

Y1 - 2009/4

N2 - The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.

AB - The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 4 PART 2

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ER -

Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors

Abstract

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