Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors

Po Chin Huang, Ting Kuo Kang, Bo Chin Wang, San Lein Wu, Shoou Jinn Chang

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1 Citation (Scopus)

Abstract

The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.

Original languageEnglish
Article number04C038
JournalJapanese journal of applied physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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