Study of GaN-based LEDs with hybrid SiO2 microsphere/nanosphere antireflection coating as a passivation layer by a rapid convection deposition

Chi Hsiang Hsu, Yi Chun Chan, Wei Cheng Chen, Ching Hong Chang, Jian Kai Liou, Shiou Ying Cheng, Der Feng Guo, Wen Chau Liu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A hybrid SiO2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO2 microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7% enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO2 microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.

Original languageEnglish
Article number7845605
Pages (from-to)1134-1139
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume64
Issue number3
DOIs
Publication statusPublished - 2017 Mar

Fingerprint

Antireflection coatings
Nanospheres
Microspheres
Passivation
Light emitting diodes
Leakage currents
Electric properties
Scattering
Degradation
Convection

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hsu, Chi Hsiang ; Chan, Yi Chun ; Chen, Wei Cheng ; Chang, Ching Hong ; Liou, Jian Kai ; Cheng, Shiou Ying ; Guo, Der Feng ; Liu, Wen Chau. / Study of GaN-based LEDs with hybrid SiO2 microsphere/nanosphere antireflection coating as a passivation layer by a rapid convection deposition. In: IEEE Transactions on Electron Devices. 2017 ; Vol. 64, No. 3. pp. 1134-1139.
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abstract = "A hybrid SiO2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO2 microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7{\%} enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO2 microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.",
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Study of GaN-based LEDs with hybrid SiO2 microsphere/nanosphere antireflection coating as a passivation layer by a rapid convection deposition. / Hsu, Chi Hsiang; Chan, Yi Chun; Chen, Wei Cheng; Chang, Ching Hong; Liou, Jian Kai; Cheng, Shiou Ying; Guo, Der Feng; Liu, Wen Chau.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 3, 7845605, 03.2017, p. 1134-1139.

Research output: Contribution to journalArticle

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AU - Hsu, Chi Hsiang

AU - Chan, Yi Chun

AU - Chen, Wei Cheng

AU - Chang, Ching Hong

AU - Liou, Jian Kai

AU - Cheng, Shiou Ying

AU - Guo, Der Feng

AU - Liu, Wen Chau

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AB - A hybrid SiO2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO2 microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7% enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO2 microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.

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