Study of GaN-based LEDs with hybrid SiO2 microsphere/nanosphere antireflection coating as a passivation layer by a rapid convection deposition

Chi Hsiang Hsu; Yi Chun Chan; Wei Cheng Chen; Ching Hong Chang; Jian Kai Liou; Shiou Ying Cheng; Der Feng Guo; Wen Chau Liu

doi:10.1109/TED.2017.2657659

Study of GaN-based LEDs with hybrid SiO₂ microsphere/nanosphere antireflection coating as a passivation layer by a rapid convection deposition

Chi Hsiang Hsu, Yi Chun Chan, Wei Cheng Chen, Ching Hong Chang, Jian Kai Liou, Shiou Ying Cheng, Der Feng Guo, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A hybrid SiO₂ micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO₂ microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7% enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO₂ microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.

Original language	English
Article number	7845605
Pages (from-to)	1134-1139
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	3
DOIs	https://doi.org/10.1109/TED.2017.2657659
Publication status	Published - 2017 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2017.2657659

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Hsu, C. H., Chan, Y. C., Chen, W. C., Chang, C. H., Liou, J. K., Cheng, S. Y., Guo, D. F., & Liu, W. C. (2017). Study of GaN-based LEDs with hybrid SiO₂ microsphere/nanosphere antireflection coating as a passivation layer by a rapid convection deposition. IEEE Transactions on Electron Devices, 64(3), 1134-1139. Article 7845605. https://doi.org/10.1109/TED.2017.2657659

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title = "Study of GaN-based LEDs with hybrid SiO2 microsphere/nanosphere antireflection coating as a passivation layer by a rapid convection deposition",

abstract = "A hybrid SiO2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO2 microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7% enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO2 microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.",

author = "Hsu, {Chi Hsiang} and Chan, {Yi Chun} and Chen, {Wei Cheng} and Chang, {Ching Hong} and Liou, {Jian Kai} and Cheng, {Shiou Ying} and Guo, {Der Feng} and Liu, {Wen Chau}",

note = "Funding Information: Thisworkwas supported in part by the National Science Council of the Republic of China under Contract NSC 103-2221-E-006-244-MY3 and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University. Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = mar,

doi = "10.1109/TED.2017.2657659",

language = "English",

volume = "64",

pages = "1134--1139",

journal = "IEEE Transactions on Electron Devices",

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T1 - Study of GaN-based LEDs with hybrid SiO2 microsphere/nanosphere antireflection coating as a passivation layer by a rapid convection deposition

AU - Hsu, Chi Hsiang

AU - Chan, Yi Chun

AU - Chen, Wei Cheng

AU - Chang, Ching Hong

AU - Liou, Jian Kai

AU - Cheng, Shiou Ying

AU - Guo, Der Feng

AU - Liu, Wen Chau

N1 - Funding Information: Thisworkwas supported in part by the National Science Council of the Republic of China under Contract NSC 103-2221-E-006-244-MY3 and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University. Publisher Copyright: © 2017 IEEE.

PY - 2017/3

Y1 - 2017/3

N2 - A hybrid SiO2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO2 microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7% enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO2 microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.

AB - A hybrid SiO2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO2 microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7% enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO2 microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.

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Study of GaN-based LEDs with hybrid SiO₂ microsphere/nanosphere antireflection coating as a passivation layer by a rapid convection deposition

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