TY - JOUR
T1 - Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO2) Layers
AU - Niu, Jing Shiuan
AU - Hsu, Ching Chuan
AU - Tsai, Jung Hui
AU - Hsu, Wei Chou
AU - Liu, Wen Chau
N1 - Funding Information:
The authors would like to thank Hui-Jung Shih (The Core Facility Center, National Cheng Kung University, Tainan, TAIWAN) for the suitable operation on HRSEM (Hitachi SU8000) and EDS (BRUKER XFlash 5060 F). Part of this work was supported under Contract MOST 109-2221-E-006-083-MY2.
Publisher Copyright:
© 2022 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
PY - 2022/7
Y1 - 2022/7
N2 - An interesting device design including a zirconium oxide (ZrO2) current blocking layer (CBL) and a ZrO2 surface passivation layer (SPL) is employed to manufacture a GaN/InGaN light-emitting diode (LED). Based on the inherently good performance of ZrO2, the current spreading effect and the undesired surface leakage are efficiently enhanced and suppressed, respectively. Energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) are used to study the relevant properties. It is found that by series calibration, 50 nm is the proper thickness of the ZrO2 CBL and SPL. The peak emission wavelength of the proposed LEDs is around 452 nm. Experimentally, at the operating condition of 110 A cm-2, the proposed Device L3 with a 50 nm-thick ZrO2 CBL and a 50 nm-thick ZrO2 SPL demonstrates improvements of 66.1% in light output power (LOP) and 64.5% in wall plug efficiency (WPE) as compared to a traditional Device L1 without the specific design. Furthermore, the proposed Device L3 presents a notable enhancement in the light emission mapping image in comparison to the traditional LED. So, the proposed device design which incorporates a proper ZrO2 CBL and ZrO2 SPL, is beneficial for manufacturing GaN/InGaN LEDs.
AB - An interesting device design including a zirconium oxide (ZrO2) current blocking layer (CBL) and a ZrO2 surface passivation layer (SPL) is employed to manufacture a GaN/InGaN light-emitting diode (LED). Based on the inherently good performance of ZrO2, the current spreading effect and the undesired surface leakage are efficiently enhanced and suppressed, respectively. Energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) are used to study the relevant properties. It is found that by series calibration, 50 nm is the proper thickness of the ZrO2 CBL and SPL. The peak emission wavelength of the proposed LEDs is around 452 nm. Experimentally, at the operating condition of 110 A cm-2, the proposed Device L3 with a 50 nm-thick ZrO2 CBL and a 50 nm-thick ZrO2 SPL demonstrates improvements of 66.1% in light output power (LOP) and 64.5% in wall plug efficiency (WPE) as compared to a traditional Device L1 without the specific design. Furthermore, the proposed Device L3 presents a notable enhancement in the light emission mapping image in comparison to the traditional LED. So, the proposed device design which incorporates a proper ZrO2 CBL and ZrO2 SPL, is beneficial for manufacturing GaN/InGaN LEDs.
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U2 - 10.1149/2162-8777/ac801b
DO - 10.1149/2162-8777/ac801b
M3 - Article
AN - SCOPUS:85135009061
SN - 2162-8769
VL - 11
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 7
M1 - 075003
ER -