Abstract
Summary form only given. The authors report the observation of hole-miniband transport in symmetrically strained GexSi1-x/Si superlattices. Two different kinds of superlattice sample were grown and fabricated. The first kind of sample consists of a single superlattice layer grown on an unstrained Gex/2 Si1-x2/Si buffer layer. The second kind of sample is called BAS (band aligned superlattice) and consists of two superlattices having different minibands. Mesa diodes of 50-100 μm in diameter were fabricated for electrical measurement. For the simple superlattice sample, current voltage (I-V) characteristics for forward and reverse biases are almost symmetric. For the BAS sample, asymmetric I-V characteristics similar to those of a p-n junction are observed. The use of GexSi1-x/Si superlattices for device applications in infrared detectors and infrared sources using optical transitions between minibands is suggested.
| Original language | English |
|---|---|
| Pages (from-to) | 2630 |
| Number of pages | 1 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 36 |
| Issue number | 11 pt 1 |
| Publication status | Published - 1989 Nov |
| Event | Photovoltaic Module Reliability Workshop - Golden, CO, USA Duration: 1989 Jun 21 → 1989 Jun 21 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering