Study of hole miniband transport in GexSi1-x/Si superlattice

R. P.G. Karunasiri, J. S. Park, K. L. Wang, F. P. Yuh

Research output: Contribution to journalConference articlepeer-review

Abstract

Summary form only given. The authors report the observation of hole-miniband transport in symmetrically strained GexSi1-x/Si superlattices. Two different kinds of superlattice sample were grown and fabricated. The first kind of sample consists of a single superlattice layer grown on an unstrained Gex/2 Si1-x2/Si buffer layer. The second kind of sample is called BAS (band aligned superlattice) and consists of two superlattices having different minibands. Mesa diodes of 50-100 μm in diameter were fabricated for electrical measurement. For the simple superlattice sample, current voltage (I-V) characteristics for forward and reverse biases are almost symmetric. For the BAS sample, asymmetric I-V characteristics similar to those of a p-n junction are observed. The use of GexSi1-x/Si superlattices for device applications in infrared detectors and infrared sources using optical transitions between minibands is suggested.

Original languageEnglish
Pages (from-to)2630
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume36
Issue number11 pt 1
Publication statusPublished - 1989 Nov
EventPhotovoltaic Module Reliability Workshop - Golden, CO, USA
Duration: 1989 Jun 211989 Jun 21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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