Study of hole transport through minibands in symmetrically strained GexSi1-x/Si superlattices

J. S. Park, R. P.G. Karunasiri, K. L. Wang

Research output: Contribution to journalArticlepeer-review


The hole transport through the minibands of symmetrically strained GexSi1-x/Si superlattices is observed. The superlattices are grown on unstrained Ge x 2Si1- x 2/Si buffer layers. Two peaks are observed from the current-voltage (I-V) and conductance-voltage (dI/dV) measurements, which are due to conduction of light holes through minibands in the superlattice. The second peak shows a negative differential resistance (NDR) region below 100 K. The energies of the minibands are estimated by thermionic emission analysis of current-voltage-temperature (I-V-T) data. Also, we have studied the long wavelength (10 μm) infrared absorption of these superlattice samples by photocurrent measurement. The measured photocurrent as a function of bias shows characteristics similar to the I-V characteristics. The preliminary data on polarization dependence of the photocurrent suggest that the infrared absorption occurs between lighth hole minibands.

Original languageEnglish
Pages (from-to)25-31
Number of pages7
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1989 Dec 30

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Study of hole transport through minibands in symmetrically strained GexSi1-x/Si superlattices'. Together they form a unique fingerprint.

Cite this