Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Chin Chuan Cheng; Yan Ying Tsai; Kun Wei Lin; Huey Ing Chen; Wei Hsi Hsu; Ching Wen Hong; Han Lien Lin; Wen Chau Liu

doi:10.1116/1.2013314

Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Chin Chuan Cheng, Yan Ying Tsai, Kun Wei Lin, Huey Ing Chen, Wei Hsi Hsu, Ching Wen Hong, Han Lien Lin, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A new hydrogen sensor based on a GaAs-based high electron mobility transistor (HEMT) with a catalytic Pt-oxide- Al0.24 Ga0.76 As (MOS) gate structure is fabricated and demonstrated. The threshold voltage shift, hydrogen detection sensitivity, and transient responses of the device under different hydrogen concentrations and temperature are measured and studied. Based on the transistor amplification action, even at an extremely low hydrogen concentration of 14 ppm H2 /air, the studied device shows significant drain current variation (about 0.12 mA). Furthermore, the studied device can be operated under wider operating temperature regimes with remarkable hydrogen-sensing properties. The decreased hydrogen detection capability with increasing operating temperature demonstrates the exothermic reaction of the hydrogen adsorption and desorption processes.

Original language	English
Pages (from-to)	1943-1947
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	5
DOIs	https://doi.org/10.1116/1.2013314
Publication status	Published - 2005

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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Cheng, C. C., Tsai, Y. Y., Lin, K. W., Chen, H. I., Hsu, W. H., Hong, C. W., Lin, H. L., & Liu, W. C. (2005). Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(5), 1943-1947. https://doi.org/10.1116/1.2013314

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title = "Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor",

abstract = "A new hydrogen sensor based on a GaAs-based high electron mobility transistor (HEMT) with a catalytic Pt-oxide- Al0.24 Ga0.76 As (MOS) gate structure is fabricated and demonstrated. The threshold voltage shift, hydrogen detection sensitivity, and transient responses of the device under different hydrogen concentrations and temperature are measured and studied. Based on the transistor amplification action, even at an extremely low hydrogen concentration of 14 ppm H2 /air, the studied device shows significant drain current variation (about 0.12 mA). Furthermore, the studied device can be operated under wider operating temperature regimes with remarkable hydrogen-sensing properties. The decreased hydrogen detection capability with increasing operating temperature demonstrates the exothermic reaction of the hydrogen adsorption and desorption processes.",

author = "Cheng, {Chin Chuan} and Tsai, {Yan Ying} and Lin, {Kun Wei} and Chen, {Huey Ing} and Hsu, {Wei Hsi} and Hong, {Ching Wen} and Lin, {Han Lien} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 92-2215-E-006-007.",

year = "2005",

doi = "10.1116/1.2013314",

language = "English",

volume = "23",

pages = "1943--1947",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor. / Cheng, Chin Chuan; Tsai, Yan Ying; Lin, Kun Wei et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 5, 2005, p. 1943-1947.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

AU - Cheng, Chin Chuan

AU - Tsai, Yan Ying

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Hsu, Wei Hsi

AU - Hong, Ching Wen

AU - Lin, Han Lien

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 92-2215-E-006-007.

PY - 2005

Y1 - 2005

N2 - A new hydrogen sensor based on a GaAs-based high electron mobility transistor (HEMT) with a catalytic Pt-oxide- Al0.24 Ga0.76 As (MOS) gate structure is fabricated and demonstrated. The threshold voltage shift, hydrogen detection sensitivity, and transient responses of the device under different hydrogen concentrations and temperature are measured and studied. Based on the transistor amplification action, even at an extremely low hydrogen concentration of 14 ppm H2 /air, the studied device shows significant drain current variation (about 0.12 mA). Furthermore, the studied device can be operated under wider operating temperature regimes with remarkable hydrogen-sensing properties. The decreased hydrogen detection capability with increasing operating temperature demonstrates the exothermic reaction of the hydrogen adsorption and desorption processes.

AB - A new hydrogen sensor based on a GaAs-based high electron mobility transistor (HEMT) with a catalytic Pt-oxide- Al0.24 Ga0.76 As (MOS) gate structure is fabricated and demonstrated. The threshold voltage shift, hydrogen detection sensitivity, and transient responses of the device under different hydrogen concentrations and temperature are measured and studied. Based on the transistor amplification action, even at an extremely low hydrogen concentration of 14 ppm H2 /air, the studied device shows significant drain current variation (about 0.12 mA). Furthermore, the studied device can be operated under wider operating temperature regimes with remarkable hydrogen-sensing properties. The decreased hydrogen detection capability with increasing operating temperature demonstrates the exothermic reaction of the hydrogen adsorption and desorption processes.

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SN - 1071-1023

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

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