Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Chin Chuan Cheng, Yan Ying Tsai, Kun Wei Lin, Huey Ing Chen, Wei Hsi Hsu, Ching Wen Hong, Han Lien Lin, Wen Chau Liu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A new hydrogen sensor based on a GaAs-based high electron mobility transistor (HEMT) with a catalytic Pt-oxide- Al0.24 Ga0.76 As (MOS) gate structure is fabricated and demonstrated. The threshold voltage shift, hydrogen detection sensitivity, and transient responses of the device under different hydrogen concentrations and temperature are measured and studied. Based on the transistor amplification action, even at an extremely low hydrogen concentration of 14 ppm H2 /air, the studied device shows significant drain current variation (about 0.12 mA). Furthermore, the studied device can be operated under wider operating temperature regimes with remarkable hydrogen-sensing properties. The decreased hydrogen detection capability with increasing operating temperature demonstrates the exothermic reaction of the hydrogen adsorption and desorption processes.

Original languageEnglish
Pages (from-to)1943-1947
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number5
DOIs
Publication statusPublished - 2005 Dec 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
aluminum gallium arsenides
Hydrogen
Oxides
oxides
hydrogen
Metals
operating temperature
Exothermic reactions
exothermic reactions
Drain current
transient response
Oxide semiconductors
Threshold voltage
Transient analysis
threshold voltage
Temperature
Amplification

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Cheng, Chin Chuan ; Tsai, Yan Ying ; Lin, Kun Wei ; Chen, Huey Ing ; Hsu, Wei Hsi ; Hong, Ching Wen ; Lin, Han Lien ; Liu, Wen Chau. / Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005 ; Vol. 23, No. 5. pp. 1943-1947.
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abstract = "A new hydrogen sensor based on a GaAs-based high electron mobility transistor (HEMT) with a catalytic Pt-oxide- Al0.24 Ga0.76 As (MOS) gate structure is fabricated and demonstrated. The threshold voltage shift, hydrogen detection sensitivity, and transient responses of the device under different hydrogen concentrations and temperature are measured and studied. Based on the transistor amplification action, even at an extremely low hydrogen concentration of 14 ppm H2 /air, the studied device shows significant drain current variation (about 0.12 mA). Furthermore, the studied device can be operated under wider operating temperature regimes with remarkable hydrogen-sensing properties. The decreased hydrogen detection capability with increasing operating temperature demonstrates the exothermic reaction of the hydrogen adsorption and desorption processes.",
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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor. / Cheng, Chin Chuan; Tsai, Yan Ying; Lin, Kun Wei; Chen, Huey Ing; Hsu, Wei Hsi; Hong, Ching Wen; Lin, Han Lien; Liu, Wen Chau.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 5, 01.12.2005, p. 1943-1947.

Research output: Contribution to journalArticle

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T1 - Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

AU - Cheng, Chin Chuan

AU - Tsai, Yan Ying

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Hsu, Wei Hsi

AU - Hong, Ching Wen

AU - Lin, Han Lien

AU - Liu, Wen Chau

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AB - A new hydrogen sensor based on a GaAs-based high electron mobility transistor (HEMT) with a catalytic Pt-oxide- Al0.24 Ga0.76 As (MOS) gate structure is fabricated and demonstrated. The threshold voltage shift, hydrogen detection sensitivity, and transient responses of the device under different hydrogen concentrations and temperature are measured and studied. Based on the transistor amplification action, even at an extremely low hydrogen concentration of 14 ppm H2 /air, the studied device shows significant drain current variation (about 0.12 mA). Furthermore, the studied device can be operated under wider operating temperature regimes with remarkable hydrogen-sensing properties. The decreased hydrogen detection capability with increasing operating temperature demonstrates the exothermic reaction of the hydrogen adsorption and desorption processes.

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