Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors

Kuo Hui Yu, Kun Wei Lin, Kuan Po Lin, Chih Hung Yen, Ckih Kai Wang, Wen-Chau Liu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistor was studied. The heterostructure channel and heavily doped p+-InGaP layer was added to increase the barrier height and carrier confinement. The fabrication of the device without the high-barrier gate structure was done for comparison to investigate the effect of high-barrier gate structure on device characteristics.

Original languageEnglish
Pages (from-to)1096-1101
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
Publication statusPublished - 2002 Jan 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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