A InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistor was studied. The heterostructure channel and heavily doped p+-InGaP layer was added to increase the barrier height and carrier confinement. The fabrication of the device without the high-barrier gate structure was done for comparison to investigate the effect of high-barrier gate structure on device characteristics.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2002 Jan 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering