Abstract
A InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistor was studied. The heterostructure channel and heavily doped p+-InGaP layer was added to increase the barrier height and carrier confinement. The fabrication of the device without the high-barrier gate structure was done for comparison to investigate the effect of high-barrier gate structure on device characteristics.
Original language | English |
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Pages (from-to) | 1096-1101 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2002 May |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering