Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)

Hung Ming Chuang, Shiou Ying Cheng, Po Hsien Lai, Xin Da Liao, Chun Yuan Chen, Chih Hung Yen, Rong Chau Liu, Wen Chau Liu

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10 Citations (Scopus)

Abstract

InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs) with δ-doped channels and uniformly doped channels are comprehensively studied and demonstrated. From the simulation results, based on a two-dimensional simulator of Atlas, the band diagrams, DC and RF characteristics of studied devices are compared and studied. The better drain current drivability, higher transconductance and microwave performances are obtained in the studied device with δ-doped channel. In addition, experimentally, the DDCHFET with δ-doped quantum well channel is fabricated successfully. Due to the employed InGaAs double δ-doped channel structure and Schottky behaviours of InGaP 'insulator', good DC properties including pinch-off and saturation characteristics, higher and linear transconductance, and good RF properties are obtained. Moreover, the experimental results are consistent with simulated data.

Original languageEnglish
Pages (from-to)87-92
Number of pages6
JournalSemiconductor Science and Technology
Volume19
Issue number1
DOIs
Publication statusPublished - 2004 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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