Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor

Wei Chou Wang; Jing Yuh Chen; Hsi Jen Pan; Shun Ching Feng; Kuo Hui Yu; Wen Chau Liu

doi:10.1006/spmi.1999.0701

Study of In_0.49Ga_0.51P/GaAs/In_0.49Ga_0.51P double δ-doped heterojunction bipolar transistor

Wei Chou Wang, Jing Yuh Chen, Hsi Jen Pan, Shun Ching Feng, Kuo Hui Yu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A lattice-matched In_0.49Ga_0.51P/GaAs/In_0.49Ga_0.51P double δ-doped heterojunction bipolar transistor, prepared by low-pressure metal organic chemical vapor deposition (LP-MOCVD), is fabricated successfully and reported. Due to the insertion of δ-doped sheets and setback layers both at base-emitter (B-E) and base-collector (B-C) heterojunctions, the potential spikes are suppressed significantly. In addition, the electron blocking effect is removed and a dramatic improvement of current gain is obtained. A modified Ebers-Moll model is employed to study and analyse the device performances. The experimental results show that the common-emitter current gain over 210 at the collector current of 35 mA and an offset voltage Δ V_CE smaller than 50 mV are obtained. Also, a lower knee-shaped voltage of 1.4 V at the collector current of 40 mA is observed. These results indicate that the device studied is a good candidate for high-speed and high-power circuit applications.

Original language	English
Pages (from-to)	23-33
Number of pages	11
Journal	Superlattices and Microstructures
Volume	26
Issue number	1
DOIs	https://doi.org/10.1006/spmi.1999.0701
Publication status	Published - 1999 Jul

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor",

abstract = "A lattice-matched In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor, prepared by low-pressure metal organic chemical vapor deposition (LP-MOCVD), is fabricated successfully and reported. Due to the insertion of δ-doped sheets and setback layers both at base-emitter (B-E) and base-collector (B-C) heterojunctions, the potential spikes are suppressed significantly. In addition, the electron blocking effect is removed and a dramatic improvement of current gain is obtained. A modified Ebers-Moll model is employed to study and analyse the device performances. The experimental results show that the common-emitter current gain over 210 at the collector current of 35 mA and an offset voltage Δ VCE smaller than 50 mV are obtained. Also, a lower knee-shaped voltage of 1.4 V at the collector current of 40 mA is observed. These results indicate that the device studied is a good candidate for high-speed and high-power circuit applications.",

author = "Wang, {Wei Chou} and Chen, {Jing Yuh} and Pan, {Hsi Jen} and Feng, {Shun Ching} and Yu, {Kuo Hui} and Liu, {Wen Chau}",

year = "1999",

month = jul,

doi = "10.1006/spmi.1999.0701",

language = "English",

volume = "26",

pages = "23--33",

journal = "Superlattices and Microstructures",

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T1 - Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor

AU - Wang, Wei Chou

AU - Chen, Jing Yuh

AU - Pan, Hsi Jen

AU - Feng, Shun Ching

AU - Yu, Kuo Hui

AU - Liu, Wen Chau

PY - 1999/7

Y1 - 1999/7

N2 - A lattice-matched In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor, prepared by low-pressure metal organic chemical vapor deposition (LP-MOCVD), is fabricated successfully and reported. Due to the insertion of δ-doped sheets and setback layers both at base-emitter (B-E) and base-collector (B-C) heterojunctions, the potential spikes are suppressed significantly. In addition, the electron blocking effect is removed and a dramatic improvement of current gain is obtained. A modified Ebers-Moll model is employed to study and analyse the device performances. The experimental results show that the common-emitter current gain over 210 at the collector current of 35 mA and an offset voltage Δ VCE smaller than 50 mV are obtained. Also, a lower knee-shaped voltage of 1.4 V at the collector current of 40 mA is observed. These results indicate that the device studied is a good candidate for high-speed and high-power circuit applications.

AB - A lattice-matched In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor, prepared by low-pressure metal organic chemical vapor deposition (LP-MOCVD), is fabricated successfully and reported. Due to the insertion of δ-doped sheets and setback layers both at base-emitter (B-E) and base-collector (B-C) heterojunctions, the potential spikes are suppressed significantly. In addition, the electron blocking effect is removed and a dramatic improvement of current gain is obtained. A modified Ebers-Moll model is employed to study and analyse the device performances. The experimental results show that the common-emitter current gain over 210 at the collector current of 35 mA and an offset voltage Δ VCE smaller than 50 mV are obtained. Also, a lower knee-shaped voltage of 1.4 V at the collector current of 40 mA is observed. These results indicate that the device studied is a good candidate for high-speed and high-power circuit applications.

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Study of In_0.49Ga_0.51P/GaAs/In_0.49Ga_0.51P double δ-doped heterojunction bipolar transistor

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