Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor

Wei Chou Wang, Jing Yuh Chen, Hsi Jen Pan, Shun Ching Feng, Kuo Hui Yu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A lattice-matched In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor, prepared by low-pressure metal organic chemical vapor deposition (LP-MOCVD), is fabricated successfully and reported. Due to the insertion of δ-doped sheets and setback layers both at base-emitter (B-E) and base-collector (B-C) heterojunctions, the potential spikes are suppressed significantly. In addition, the electron blocking effect is removed and a dramatic improvement of current gain is obtained. A modified Ebers-Moll model is employed to study and analyse the device performances. The experimental results show that the common-emitter current gain over 210 at the collector current of 35 mA and an offset voltage Δ VCE smaller than 50 mV are obtained. Also, a lower knee-shaped voltage of 1.4 V at the collector current of 40 mA is observed. These results indicate that the device studied is a good candidate for high-speed and high-power circuit applications.

Original languageEnglish
Pages (from-to)23-33
Number of pages11
JournalSuperlattices and Microstructures
Volume26
Issue number1
DOIs
Publication statusPublished - 1999 Jul

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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