Abstract
Perovskite thin film materials possess good dielectric properties, which vary with applied voltage, and have thus been thoroughly investigated for applications as thin film tunable microwave devices. However, the tunability of the thin film materials derived from the frequency response of the thin film devices suffers from ambiguity in extracting the true dielectric response of the thin film materials in microwave frequency regime. To circumvent such a difficulty, we investigated the dielectric properties of perovskite thin films by using a novel scanning evanescent microwave microscopy (SEMM). To extract the dielectric parameters from original microwave frequency response signal of SEMM probe, we perform a 3-dimensional (3D) finite element simulation to model the frequency behavior of the SEMM microwave probe. Dielectric images of the thin films with submicron resolution can be obtained by using such a near-field technique, which correlates very well with the morphology of the films examined by atomic force microscopy. Moreover, the dielectric images of dielectric thin films were compared to those of ferroelectric thin films in order to discuss the related dielectric mechanism of the materials.
| Original language | English |
|---|---|
| Pages (from-to) | 261-265 |
| Number of pages | 5 |
| Journal | Journal of Electroceramics |
| Volume | 13 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2004 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Mechanics of Materials
- Materials Chemistry
- Electrical and Electronic Engineering
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Study of microwave dielectric properties of perovskite thin films by near-field microscopy. / Chen, Yi-Chun; Hsieh, Yun Shuo; Cheng, Hsiu Fung; Lin, I. Nan.
In: Journal of Electroceramics, Vol. 13, No. 1-3, 01.07.2004, p. 261-265.Research output: Contribution to journal › Article
TY - JOUR
T1 - Study of microwave dielectric properties of perovskite thin films by near-field microscopy
AU - Chen, Yi-Chun
AU - Hsieh, Yun Shuo
AU - Cheng, Hsiu Fung
AU - Lin, I. Nan
PY - 2004/7/1
Y1 - 2004/7/1
N2 - Perovskite thin film materials possess good dielectric properties, which vary with applied voltage, and have thus been thoroughly investigated for applications as thin film tunable microwave devices. However, the tunability of the thin film materials derived from the frequency response of the thin film devices suffers from ambiguity in extracting the true dielectric response of the thin film materials in microwave frequency regime. To circumvent such a difficulty, we investigated the dielectric properties of perovskite thin films by using a novel scanning evanescent microwave microscopy (SEMM). To extract the dielectric parameters from original microwave frequency response signal of SEMM probe, we perform a 3-dimensional (3D) finite element simulation to model the frequency behavior of the SEMM microwave probe. Dielectric images of the thin films with submicron resolution can be obtained by using such a near-field technique, which correlates very well with the morphology of the films examined by atomic force microscopy. Moreover, the dielectric images of dielectric thin films were compared to those of ferroelectric thin films in order to discuss the related dielectric mechanism of the materials.
AB - Perovskite thin film materials possess good dielectric properties, which vary with applied voltage, and have thus been thoroughly investigated for applications as thin film tunable microwave devices. However, the tunability of the thin film materials derived from the frequency response of the thin film devices suffers from ambiguity in extracting the true dielectric response of the thin film materials in microwave frequency regime. To circumvent such a difficulty, we investigated the dielectric properties of perovskite thin films by using a novel scanning evanescent microwave microscopy (SEMM). To extract the dielectric parameters from original microwave frequency response signal of SEMM probe, we perform a 3-dimensional (3D) finite element simulation to model the frequency behavior of the SEMM microwave probe. Dielectric images of the thin films with submicron resolution can be obtained by using such a near-field technique, which correlates very well with the morphology of the films examined by atomic force microscopy. Moreover, the dielectric images of dielectric thin films were compared to those of ferroelectric thin films in order to discuss the related dielectric mechanism of the materials.
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U2 - 10.1007/s10832-004-5109-8
DO - 10.1007/s10832-004-5109-8
M3 - Article
VL - 13
SP - 261
EP - 265
JO - Journal of Electroceramics
JF - Journal of Electroceramics
SN - 1385-3449
IS - 1-3
ER -