Study of negative differential resistance phenomenon in a two-step barrier diode

Jia Chuan Lin, Shui-Jinn Wang, Wan Rone Liou, Ying Che Luo, Ching Yuan Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, the realization of AlxGa1-xAs/GaAs two-step barrier diode is presented. Experimental observation on the current-voltage (I-V) characteristics of the two-step barrier diode is reported for the first time. At both room temperature and 77 K, it shows a strong negative differential resistance (NDR) under forward bias while no similar phenomenon was observed under reverse bias. Such an asymmetric I-V characteristic would open the possibility of NDR in an ac field in the absence of a dc bias. Theoretical simulation and experimental I-V characteristics are compared and discussed.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherIEEE
Pages140-143
Number of pages4
Publication statusPublished - 1997
EventProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
Duration: 1996 Nov 261996 Nov 28

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
CityPenang, Malaysia
Period96-11-2696-11-28

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Lin, J. C., Wang, S-J., Liou, W. R., Luo, Y. C., & Cheng, C. Y. (1997). Study of negative differential resistance phenomenon in a two-step barrier diode. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 140-143). IEEE.