Study of negative differential resistance phenomenon in a two-step barrier diode

Jia Chuan Lin; Shui Jinn Wang; Wan Rone Liou; Ying Che Luo; Ching Yuan Cheng

Study of negative differential resistance phenomenon in a two-step barrier diode

Jia Chuan Lin, Shui Jinn Wang, Wan Rone Liou, Ying Che Luo, Ching Yuan Cheng

Institute of Microelectronics

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

In this work, the realization of Al_xGa_1-xAs/GaAs two-step barrier diode is presented. Experimental observation on the current-voltage (I-V) characteristics of the two-step barrier diode is reported for the first time. At both room temperature and 77 K, it shows a strong negative differential resistance (NDR) under forward bias while no similar phenomenon was observed under reverse bias. Such an asymmetric I-V characteristic would open the possibility of NDR in an ac field in the absence of a dc bias. Theoretical simulation and experimental I-V characteristics are compared and discussed.

Original language	English
Pages	140-143
Number of pages	4
Publication status	Published - 1997
Event	Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia Duration: 1996 Nov 26 → 1996 Nov 28

Other

Other	Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
City	Penang, Malaysia
Period	96-11-26 → 96-11-28

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{9fa7839e3c054c3db7b7d9270809c11e,

title = "Study of negative differential resistance phenomenon in a two-step barrier diode",

abstract = "In this work, the realization of AlxGa1-xAs/GaAs two-step barrier diode is presented. Experimental observation on the current-voltage (I-V) characteristics of the two-step barrier diode is reported for the first time. At both room temperature and 77 K, it shows a strong negative differential resistance (NDR) under forward bias while no similar phenomenon was observed under reverse bias. Such an asymmetric I-V characteristic would open the possibility of NDR in an ac field in the absence of a dc bias. Theoretical simulation and experimental I-V characteristics are compared and discussed.",

author = "Lin, {Jia Chuan} and Wang, {Shui Jinn} and Liou, {Wan Rone} and Luo, {Ying Che} and Cheng, {Ching Yuan}",

year = "1997",

language = "English",

pages = "140--143",

note = "Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE ; Conference date: 26-11-1996 Through 28-11-1996",

}

TY - CONF

T1 - Study of negative differential resistance phenomenon in a two-step barrier diode

AU - Lin, Jia Chuan

AU - Wang, Shui Jinn

AU - Liou, Wan Rone

AU - Luo, Ying Che

AU - Cheng, Ching Yuan

PY - 1997

Y1 - 1997

N2 - In this work, the realization of AlxGa1-xAs/GaAs two-step barrier diode is presented. Experimental observation on the current-voltage (I-V) characteristics of the two-step barrier diode is reported for the first time. At both room temperature and 77 K, it shows a strong negative differential resistance (NDR) under forward bias while no similar phenomenon was observed under reverse bias. Such an asymmetric I-V characteristic would open the possibility of NDR in an ac field in the absence of a dc bias. Theoretical simulation and experimental I-V characteristics are compared and discussed.

AB - In this work, the realization of AlxGa1-xAs/GaAs two-step barrier diode is presented. Experimental observation on the current-voltage (I-V) characteristics of the two-step barrier diode is reported for the first time. At both room temperature and 77 K, it shows a strong negative differential resistance (NDR) under forward bias while no similar phenomenon was observed under reverse bias. Such an asymmetric I-V characteristic would open the possibility of NDR in an ac field in the absence of a dc bias. Theoretical simulation and experimental I-V characteristics are compared and discussed.

UR - http://www.scopus.com/inward/record.url?scp=0030661165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030661165&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030661165

SP - 140

EP - 143

T2 - Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE

Y2 - 26 November 1996 through 28 November 1996

ER -

Study of negative differential resistance phenomenon in a two-step barrier diode

Abstract

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All Science Journal Classification (ASJC) codes

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