Study of nitrogen diffusion profile of low resistivity diffusion barrier by resputtering technology

Jung Chih Tsao, Chuan-Pu Liu, Ying Lang Wang, Kei Wei Chen

Research output: Contribution to journalArticle

Abstract

One of the major challenges in the integrated circuit beyond 90 nm is to fabricate low resistivity Cu diffusion barrier layer in the metal multilevel interconnect. TaJTaN bilayer is one of the best candidates for Cu metal diffusion layer. It provides the advantage good diffusion performance between Cu and low-k dielectric layer. However, the resistivity is large deviation from tantalum phase variation. This is because of Tantalum of bilayer easily found in beta-phase, which is high resistance. This paper proposed a low resistivity alpha-Ta thin films were grown by treatment-TaN using Argon plasma treatment on TaN substrate. The argon treatment redistribute nitrogen profile between Ta and TaN and create a Ta(N) interface. X-ray diffraction analyses show that the interface film is composed of b.c.c.-Ta(N) grains. This Ta/treatment TaN provide new method to fabricated b.c.c.-Ta(N) difference from the previously report deposition by sputtering process. The resistivity will decrease nitrogen concentration to provide a favorable environment to promote low resistivity Tantalum alpha- phase formation.

Original languageEnglish
Pages (from-to)759-763
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume9
Issue number2
DOIs
Publication statusPublished - 2009 Feb

Fingerprint

Tantalum
Diffusion barriers
Nitrogen
Argon
Technology
nitrogen
tantalum
electrical resistivity
profiles
Metals
X-Ray Diffraction
Sputtering
Integrated circuits
argon plasma
Plasmas
high resistance
X ray diffraction
Thin films
barrier layers
metals

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Study of nitrogen diffusion profile of low resistivity diffusion barrier by resputtering technology",
abstract = "One of the major challenges in the integrated circuit beyond 90 nm is to fabricate low resistivity Cu diffusion barrier layer in the metal multilevel interconnect. TaJTaN bilayer is one of the best candidates for Cu metal diffusion layer. It provides the advantage good diffusion performance between Cu and low-k dielectric layer. However, the resistivity is large deviation from tantalum phase variation. This is because of Tantalum of bilayer easily found in beta-phase, which is high resistance. This paper proposed a low resistivity alpha-Ta thin films were grown by treatment-TaN using Argon plasma treatment on TaN substrate. The argon treatment redistribute nitrogen profile between Ta and TaN and create a Ta(N) interface. X-ray diffraction analyses show that the interface film is composed of b.c.c.-Ta(N) grains. This Ta/treatment TaN provide new method to fabricated b.c.c.-Ta(N) difference from the previously report deposition by sputtering process. The resistivity will decrease nitrogen concentration to provide a favorable environment to promote low resistivity Tantalum alpha- phase formation.",
author = "Tsao, {Jung Chih} and Chuan-Pu Liu and Wang, {Ying Lang} and Chen, {Kei Wei}",
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Study of nitrogen diffusion profile of low resistivity diffusion barrier by resputtering technology. / Tsao, Jung Chih; Liu, Chuan-Pu; Wang, Ying Lang; Chen, Kei Wei.

In: Journal of Nanoscience and Nanotechnology, Vol. 9, No. 2, 02.2009, p. 759-763.

Research output: Contribution to journalArticle

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