Study of Sb/SnO2 bi-layer films prepared by ion beam sputtering deposition technique

Chun Min Wang, Chun Chieh Huang, Jui-Chao Kuo, Jow-Lay Huang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In the present work, bi-layer thin films of Sb/SnO2 were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO2 layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO2 bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10- 3 Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness.

Original languageEnglish
Pages (from-to)533-538
Number of pages6
JournalThin Solid Films
Volume570
Issue numberPB
DOIs
Publication statusPublished - 2014 Nov 3

Fingerprint

Ion beams
Sputtering
sputtering
ion beams
Opacity
Electric properties
Optical properties
transmittance
electrical properties
Annealing
optical properties
Glass
Thin films
electrical resistivity
Substrates
annealing
glass
thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "In the present work, bi-layer thin films of Sb/SnO2 were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO2 layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO2 bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10- 3 Ω cm and an optical transmittance of 26{\%} for Sb film having 10 nm thickness.",
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Study of Sb/SnO2 bi-layer films prepared by ion beam sputtering deposition technique. / Wang, Chun Min; Huang, Chun Chieh; Kuo, Jui-Chao; Huang, Jow-Lay.

In: Thin Solid Films, Vol. 570, No. PB, 03.11.2014, p. 533-538.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Kuo, Jui-Chao

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AB - In the present work, bi-layer thin films of Sb/SnO2 were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO2 layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO2 bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10- 3 Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness.

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